Over the last decade, an enormous amount of work has been done to understand the
fundamental properties of high electron mobility transistors HEMTs based on …

A first-principles theoretical comparison of the performances of identical Al/sub 0.32/Ga/sub
0.68/As/GaAs and Al/sub 0.15/Ga/sub 0.15/As/In/sub 0.15/Ga/sub 0.85/As/GaAs …

The calculations presented include the full details of the two-dimensional electron gas,
nonstationary transport effects, real-space transfer, and the effects of the two-dimensional …

The correlation of the capacitance-voltage characteristics of fat MODFETs (FATFETs) to the
current-voltage characteristics of FATFETs and the pulse-doped MODFET is reported. The …

Accurate modeling of MODFETs and of certain novel structures recently proposed requires
that a number of physical phenomena occurring in these devices be considered. Among …

The spectral voltage noise intensity was measured in Al x Ga 1-x As epilayers in the
frequency range of 1 Hz–100 kHz and in the temperature range of 77–330 K. The electron …

A strong-inversion, depletion-layer model of the threshold voltage for MODFETs has been
used to assess the role of unintentional acceptor doping. For concentrations less than …

The sheet carrier concentration (two-dimensional electron gas (2DEG), at the AlGaAs/GaAs
interface is analytically modelled with its dependence on temperature (from liquid nitrogen …

[en] Modulation doped heterostructures are very interesting advanced structures, which
make it possible to study carrier transport in low dimensionality systems, and to fabricate …

The high electron mobility transistor (HEMT) is one of the fastest switching devices available
today. In order to best utilize its capabilities one must be able to simulate its behavior in …