Domain wall memory: Physics, materials, and devices

D Kumar, T Jin, R Sbiaa, M Kläui, S Bedanta, S Fukami… - Physics Reports, 2022 - Elsevier
Digital data, generated by corporate and individual users, is growing day by day due to a
vast range of digital applications. Magnetic hard disk drives (HDDs) currently fulfill the …

Ultralow energy domain wall device for spin-based neuromorphic computing

D Kumar, HJ Chung, JP Chan, T Jin, ST Lim… - ACS …, 2023 - ACS Publications
Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to
achieve low-power intelligent devices. To realize NC, researchers investigate various types …

Magnetic domain walls: types, processes and applications

G Venkat, DA Allwood, TJ Hayward - Journal of Physics D …, 2023 - iopscience.iop.org
Abstract Domain walls (DWs) in magnetic nanowires are promising candidates for a variety
of applications including Boolean/unconventional logic, memories, in-memory computing as …

Field-free spin–orbit torque switching of perpendicular magnetization by the Rashba interface

B Cui, H Wu, D Li, SA Razavi, D Wu… - … applied materials & …, 2019 - ACS Publications
Current-induced spin–orbit torques (SOTs) enable efficient electrical manipulation of the
magnetization in heterostructures with a perpendicular magnetic anisotropy through the …

Deterministic Current‐Induced Perpendicular Switching in Epitaxial Co/Pt Layers without an External Field

J Ryu, CO Avci, M Song, M Huang… - Advanced Functional …, 2023 - Wiley Online Library
Current‐induced spin‐orbit torques (SOTs) have emerged as a powerful tool to control
magnetic elements and non‐uniform magnetic textures such as domain walls and …

Spin–Orbit Torque Switching of a High-Quality Perpendicularly Magnetized Ferrimagnetic Heusler Mn3Ge Film

L Ren, L Liu, X Shu, W Lin, P Yang… - ACS Applied Materials …, 2021 - ACS Publications
Current-induced spin–orbit torque (SOT) switching of magnetization has attracted great
interest due to its potential application in magnetic memory devices, which offer low-energy …

Helium ion microscopy for reduced spin orbit torque switching currents

P Dunne, C Fowley, G Hlawacek, J Kurian… - Nano Letters, 2020 - ACS Publications
Spin orbit torque driven switching is a favorable way to manipulate nanoscale magnetic
objects for both memory and wireless communication devices. The critical current required …

Field-free switching of a spin-orbit-torque device through interlayer-coupling-induced domain walls

X Zhao, L Ji, W Liu, S Li, L Liu, Y Song, Y Li, J Ma… - Physical Review …, 2020 - APS
The spin-orbit-torque (SOT) device is a promising candidate for the next-generation
magnetic random-access memory; however, the static in-plane field needed to induce …

Field-free manipulation of exchange bias in perpendicularly magnetized Pt/Co/IrMn structures by spin-orbit torque

J Yun, Q Zhang, H Xu, X Guo, L Xi, K Jin - Physical Review Materials, 2024 - APS
Electrical manipulation of exchange bias by spin-orbit torque (SOT) is promising for the
design of spintronic devices, such as multilevel memory and neuromorphic computing …

Strain engineered domain structure and their relaxation in perpendicularly magnetized Co/Pt deposited on flexible polyimide

E Pandey, BB Singh, P Sharangi, S Bedanta - Nano Express, 2020 - iopscience.iop.org
The demand of fast and power efficient spintronic devices with flexibility requires additional
energy for magnetization manipulation. Stress/strain have shown their potentials for tuning …