As semiconductor devices shrink and their manufacturing processes advance, accurately
measuring in-cell critical dimensions (CD) becomes increasingly crucial. Traditional test …

In vertically stacked gate-all-around Nanosheet FET (NSFET), the channels/sheets are
wrapped by a low thermal conductivity material, which hinders the active heat flow path and …

Today, extensive research has focused on heat propagation in emerging nanoelectronic
devices. With advances in the fabrication of nanowire (NW) transistors, thermal management …

Abstract Vertical Nanosheet Transistors serves as a potential substitute for the Nanowire
and FinFET architecture at advanced technology nodes on account of higher drive current …

This work presents an analytical model for the drain and gate currents of silicon nanowire
and nanosheet MOS transistors valid in all operating regions in the temperature range from …

Abstract In recent technology, Nano Ribbon FET (NR-FET) is an emerging device due to its
enhanced effective width than other FET devices. In this paper, the electrical parameters …

In the relentless pursuit of semiconductor device scaling, stacked silicon nanosheet gate-all-
around field-effect transistors (NSFETs) are emerging as key candidates for sub-3nm …

A novel and practicable partial punch-through-stopper (p-PTS) scheme beneath the gate
area is proposed for the substrate leakage current suppression in the gate-all-around (GAA) …

The advent of novel materials for manufacturing and the inherent constraints of nanoscale
devices, which lead to an increase in the unpredictability of device characteristics, pose …

Electrical characteristics of the multi-channel nanosheet (NS) metal-oxide-semiconductor
field effect transistors (MOSFETs) with (w/) and without (w/o) the low-resistivity (5.6× 10–6 Ω …