Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k)
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …

Background: The insatiable need for low-power and high-performance integrated circuit (IC)
results in the development of alternative options for metal oxide semiconductor field effect …

In this letter, we present a novel device, the germanium electron-hole (EH) bilayer tunnel
field-effect transistor, which exploits carrier tunneling through a bias-induced EH bilayer. The …

We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole
bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced …

We have investigated the electron mobility in ultrathin-body InGaAs-on-insulator devices
using physics-based modeling that self-consistently accounts for quantum confinement and …

Fluorine cold plasmas produced by an electrical discharge in SF 6, CF 4, CHF 3 or C 4 F 8
gases, principally, have two main fields of application. The first and historical application is …

An atomic layer etching process for silicon nitride (Si 3 N 4) has been developed in which
ammonium fluorosilicate [(NH 4) 2 SiF 6] is formed and desorbed using infrared annealing …

Silicon nitride (SiN x) has been playing a vital role in the fabrication of micro-and nano-scale
structures in numerous applications for several decades. Optimal etch recipes and a …

Atomic layer etching (ALE) is usually classified into ion-driven anisotropic etching or
thermally driven isotropic etching. In this work, we present a thermal ALE process for Si 3 N …

We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole
bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced …