Replacement metal gate structures
VS Basker, K Cheng, TE Standaert, J Wang - US Patent 9,685,532, 2017 - Google Patents
Replacement metal gate structures with improved cham fered workfunction metal and self-
aligned contact and meth ods of manufacture are provided. The method includes forming a …
aligned contact and meth ods of manufacture are provided. The method includes forming a …
Semiconductor device and method of manufacturing the same
Y Kim, C Kim, YH Son, JH Yoo, W Jung - US Patent 10,553,582, 2020 - Google Patents
A semiconductor device includes a substrate having an active pattern, a conductive pattern
crossing the active pattern, a spacer structure on at least one side surface of the conductive …
crossing the active pattern, a spacer structure on at least one side surface of the conductive …
Semiconductor device structure and method for forming the same
WH Fang, CY Chen, MC Tai, WU Po-Chi - US Patent 10,134,861, 2018 - Google Patents
(57) ABSTRACT A semiconductor device structure is provided. The semicon ductor device
structure includes a substrate, a first fin structure and a second fin structure disposed over …
structure includes a substrate, a first fin structure and a second fin structure disposed over …
Replacement metal gate structures
VS Basker, K Cheng, TE Standaert, J Wang - US Patent 9,871,116, 2018 - Google Patents
Replacement metal gate structures with improved chamfered workfunction metal and self-
aligned contact and methods of manufacture are provided. The method includes forming a …
aligned contact and methods of manufacture are provided. The method includes forming a …
Replacement metal gate structures
VS Basker, K Cheng, TE Standaert, J Wang - US Patent 9,691,877, 2017 - Google Patents
Replacement metal gate structures with improved chamfered workfunction metal and self-
aligned contact and methods of manufacture are provided. The method includes forming a …
aligned contact and methods of manufacture are provided. The method includes forming a …
Replacement metal gate structures
VS Basker, K Cheng, TE Standaert, J Wang - US Patent 9,865,739, 2018 - Google Patents
Replacement metal gate structures with improved chamfered workfunction metal and self-
aligned contact and methods of manufacture are provided. The method includes forming a …
aligned contact and methods of manufacture are provided. The method includes forming a …
Semiconductor device including gate having dents and spacer protrusions extending therein
JH Lee, G Park, TY Kim, Y Na, DH Kim - US Patent 10,431,685, 2019 - Google Patents
A semiconductor device includes a substrate including a fin-shaped active region that
protrudes from the substrate; a gate insulating film covering a top surface and both side …
protrudes from the substrate; a gate insulating film covering a top surface and both side …
Semiconductor device and method of forming the same
ML Lu, YH Hung, CF Chang, YL Wu, WJ Shen… - US Patent …, 2018 - Google Patents
A method of forming a semiconductor device is provided. At least one stacked structure is
provided on a substrate. A first spacer material layer, a second spacer material layer, and a …
provided on a substrate. A first spacer material layer, a second spacer material layer, and a …
Semiconductor device and method of fabricating the same
H Lee, W Kim, J Song, S Hyun - US Patent App. 15/158,885, 2016 - Google Patents
(57) ABSTRACT A semiconductor device includes a gate structure crossing an active pattern
of a Substrate. The semiconductor device may include a gate dielectric pattern between the …
of a Substrate. The semiconductor device may include a gate dielectric pattern between the …
Replacement metal gate structures
VS Basker, K Cheng, TE Standaert, J Wang - US Patent 10,177,256, 2019 - Google Patents
Replacement metal gate structures with improved cham fered workfunction metal and self-
aligned contact and meth ods of manufacture are provided. The method includes forming a …
aligned contact and meth ods of manufacture are provided. The method includes forming a …