[57] ABSTRACT A semiconductor memory comprises a switching de vice and a charge-
storage device disposed at the upper and lower sides, respectively, of each of …

3,412.297 3.497, 777 3,564,356 3,660,697 4,003,072 4,011, 105 4,300,150 4.324, 038
4.326, 332 4,337,474 4,345,265 4,445,202 4,568,958 4,579,621 4,636,281 4,638,344 …

(57) ABSTRACT A method of manufacturing a semiconductor device having a charge
control trench and an active control trench with a thick oxide bottom includes forming a drift …

4,673.962 A 6/1987 Chatterjee et al. 5,525,820 A 6/1996 Furuyama 4,677,455 A 6, 1987
Okajima 5,528,062 A 6/1996 Hsieh et al. 4,734,384 A 3, 1988 Tsuchiya 5,543,652 A 8, 1996 …

Various embodiments for improved power devices as well as their methods of manufacture,
packaging and circuitry incor porating the same for use in a wide variety of power electronic …

(57) ABSTRACT A Semiconductor device has an element Substrate including a
Semiconductor layer of a first conductivity type being formed over a semiconductor Substrate …

2014-09-26 Assigned to FAIRCHILD SEMICONDUCTOR CORPORATION reassignment
FAIRCHILD SEMICONDUCTOR CORPORATION ASSIGNMENT OF ASSIGNORS …

(60) Division of application No. 1 1/026,276, filed on Dec. SERE material. The device Giira,
SOUC 29, 2004, now Pat No. 735,342, and a regions having the first conductivity type …

US 2008/0135931 A1 Jun-12, 2008 A semiconductor power device includes a drift region of
a? rst conductivity type, a well region extending above the drift Related US. Application Data …

(57) ABSTRACT A semiconductor power device includes a drift region of a first conductivity
type, a well region extending above the drift region and having a second conductivity type …