Wide band gap devices and their application in power electronics
Power electronic systems have a great impact on modern society. Their applications target a
more sustainable future by minimizing the negative impacts of industrialization on the …
more sustainable future by minimizing the negative impacts of industrialization on the …
A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs
CA Grome, W Ji - Electronics, 2024 - mdpi.com
Radiation hardening of power MOSFETs (metal oxide semiconductor field effect transistors)
is of the highest priority for sustaining high-power systems in the space radiation …
is of the highest priority for sustaining high-power systems in the space radiation …
Phonon stability boundary and deep elastic strain engineering of lattice thermal conductivity
Recent studies have reported the experimental discovery that nanoscale specimens of even
a natural material, such as diamond, can be deformed elastically to as much as 10% tensile …
a natural material, such as diamond, can be deformed elastically to as much as 10% tensile …
Retrograde p-well for 10-kV class SiC IGBTs
In this paper, we propose the use of a retrograde doping profile for the p-well for ultrahigh
voltage (> 10 kV) SiC IGBTs. We show that the retrograde p-well effectively addresses the …
voltage (> 10 kV) SiC IGBTs. We show that the retrograde p-well effectively addresses the …
Performance modeling of silicon carbide photoconductive switches for high-power and high-frequency applications
In this article, we focus on the physical modeling of the nonlinear operation of intrinsic
photoconductive semiconductor switches (PCSS) based on 4H-SiC using coupled electrical …
photoconductive semiconductor switches (PCSS) based on 4H-SiC using coupled electrical …
Modeling of enhancement-mode GaN-GIT for high-power and high-temperature application
This article presents an analytical model for enhancement-mode GaN devices for high-
power application. The model is developed specifically for a GaN gate injection transistor …
power application. The model is developed specifically for a GaN gate injection transistor …
Simulation study of 4H-SiC high-k pillar MOSFET with integrated Schottky barrier diode
YL Zheng, WM Tang, T Chau… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD)
integrated between the split gates, and is investigated by numerical TCAD simulation …
integrated between the split gates, and is investigated by numerical TCAD simulation …
Low On-Resistance and Ultrafast Rise Time Based on Vertical Diamond Photoconductive Switch with NPN Structure
J Jiao, L Xiao, X Sun, Y Li, H Sha, Y Wang… - ACS …, 2024 - ACS Publications
Diamond photoconductive switch devices are expected to be candidates for microwave
generation systems based on their attractive characteristics. Herein, a nitrogen-doped …
generation systems based on their attractive characteristics. Herein, a nitrogen-doped …
Quasi-fermi-based charge transport scheme for device simulation in cryogenic, wide bandgap, and high-voltage applications
Z Stanojević, JM González-Medina… - … on Electron Devices, 2022 - ieeexplore.ieee.org
We present a novel approach to solving the transport problem in semiconductors. We
reformulate the drift-diffusion (DD) equations in terms of the quasi-Fermi-energies as …
reformulate the drift-diffusion (DD) equations in terms of the quasi-Fermi-energies as …
Analysis of breakdown voltage for GaN MIS-HEMT with various composite field plate configurations and passivation layers
The effects of different field plate designs on the breakdown voltage of GaN Metal-insulator-
semiconductor high electron mobility transistors (MIS-HEMTs) were examined in this study …
semiconductor high electron mobility transistors (MIS-HEMTs) were examined in this study …