This paper reviews recent developments in quantum transport and it presents current efforts
to explore the contribution of topological insulator boundary states to thermoelectricity in Bi 2 …

We report a new mechanism that does not require the formation of interfacial dislocations to
mediate spiral growth during molecular beam epitaxy of Bi 2 Se 3. Based on in situ scanning …

Large-area topological insulator Bi 2 Te 3 thin films were grown on Al 2 O 3 (0001) using a
two-temperature step molecular beam epitaxy growth process. By depositing a low …

Earth-abundant semiconducting materials are a potential solution for large-scale
deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth …

Tetradymite-structured chalcogenides such as bismuth telluride (Bi2Te3) are of significant
interest for thermoelectric energy conversion and as topological insulators. Dislocations play …

N-type Bi2Te2. 7Se0. 3 thermoelectric thin films with thickness 800nm have been deposited
on glass substrates by flash evaporation method at 473K. Annealing effects on the …

We investigate the structure of 1 3 ⟨ 0 ̄ 1 11 ⟩ 1 3< 0 1¯ 11> dislocations observed in Bi 2
Te 3 nanowires. This particular type of dislocation is interesting because it has a large …

Sb2Te3 exhibits a plethora of fundamentally relevant electronic phenomena enabling
electronic phase change memory cells, thermoelectric devices, and three-dimensional …

We report nanoscale-resolved optical investigations on the local material properties of
Sb2Te3 hexagonal platelets grown by solvothermal synthesis. Using mid-infrared near-field …

We report the epitaxial growth of bismuth oxyhalide BiOX (X= Cl, Br, and I) thin films using
mist chemical vapour deposition at atmospheric pressure. The thin films grown under …