[HTML][HTML] Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

MA Nawwar, MSA Ghazala, LMS El-Deen… - RSC …, 2022 - pubs.rsc.org
Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

[HTML][HTML] Dark Current Analysis on GeSn pin Photodetectors

S Ghosh, G Sun, TA Morgan, GT Forcherio, HH Cheng… - Sensors, 2023 - mdpi.com
Group IV alloys of GeSn have been extensively investigated as a competing material
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …

Flexible titanium nitride/germanium-tin photodetectors based on sub-bandgap absorption

S An, Y Liao, M Kim - ACS Applied Materials & Interfaces, 2021 - ACS Publications
We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn)
photodetectors (PDs) with an extended photodetection range based on sub-bandgap …

[HTML][HTML] Nano-grating Assisted Light Absorption Enhancement for MSM-PDs Performance Improvement: An Updated Review

N Das, M Nur-E-Alam, A Islam, AZM Ain - Photonics, 2021 - mdpi.com
The primary focus of this review article mainly emphasizes the light absorption enhancement
for various nanostructured gratings assisted metal-semiconductor-metal photodetectors …

[HTML][HTML] Design and optimization of GeSn waveguide photodetectors for 2-µm band silicon photonics

S Ghosh, R Bansal, G Sun, RA Soref, HH Cheng… - Sensors, 2022 - mdpi.com
Silicon photonics is emerging as a competitive platform for electronic–photonic integrated
circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have …

Design and modeling of high-performance DBR-based resonant-cavity-enhanced GeSn photodetector for fiber-optic telecommunication networks

S Ghosh, H Kumar, B Mukhopadhyay… - IEEE Sensors …, 2021 - ieeexplore.ieee.org
In this work, we present a novel distributed Bragg reflector (DBR)-based resonant-cavity-
enhanced (RCE) GeSn photodetector on Si substrates to achieve high-performance …

Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum

DE Yıldız, A Kocyigit, M Yıldırım - Physica Scripta, 2023 - iopscience.iop.org
Photodiodes have gained great attention for lightning control and optical communication
over the last two decades. To obtain faster and more sensitive photodiodes are important for …

GeSn-based multiple-quantum-well photodetectors for mid-infrared sensing applications

H Kumar, AK Pandey - IEEE Transactions on NanoBioscience, 2021 - ieeexplore.ieee.org
Silicon (Si)-based mid-infrared (MIR) photonics has promising potential for realizing next-
generation ultra-compact spectroscopic systems for various applications such as label-free …

[HTML][HTML] Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave …

Q Chen, S Wu, L Zhang, H Zhou, W Fan, CS Tan - Nanoscale, 2022 - pubs.rsc.org
Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for
advanced electronic and photonic devices with attractive features such as transferability and …

[HTML][HTML] Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses

YC Tai, S An, PR Huang, YT Jheng, KC Lee… - Nanoscale, 2023 - pubs.rsc.org
Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for
wearable applications, including health-care monitoring and biomedical detection …