Group IV alloys of GeSn have been extensively investigated as a competing material alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …
S An, Y Liao, M Kim - ACS Applied Materials & Interfaces, 2021 - ACS Publications
We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn) photodetectors (PDs) with an extended photodetection range based on sub-bandgap …
The primary focus of this review article mainly emphasizes the light absorption enhancement for various nanostructured gratings assisted metal-semiconductor-metal photodetectors …
Silicon photonics is emerging as a competitive platform for electronic–photonic integrated circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have …
In this work, we present a novel distributed Bragg reflector (DBR)-based resonant-cavity- enhanced (RCE) GeSn photodetector on Si substrates to achieve high-performance …
Photodiodes have gained great attention for lightning control and optical communication over the last two decades. To obtain faster and more sensitive photodiodes are important for …
H Kumar, AK Pandey - IEEE Transactions on NanoBioscience, 2021 - ieeexplore.ieee.org
Silicon (Si)-based mid-infrared (MIR) photonics has promising potential for realizing next- generation ultra-compact spectroscopic systems for various applications such as label-free …
Q Chen, S Wu, L Zhang, H Zhou, W Fan, CS Tan - Nanoscale, 2022 - pubs.rsc.org
Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for advanced electronic and photonic devices with attractive features such as transferability and …
YC Tai, S An, PR Huang, YT Jheng, KC Lee… - Nanoscale, 2023 - pubs.rsc.org
Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for wearable applications, including health-care monitoring and biomedical detection …