The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …

n-type Ge/SiGe terahertz quantum cascade lasers are investigated using non-equilibrium
Green's functions calculations. We compare the temperature dependence of the terahertz …

Theoretical predictions indicate that the n-type Ge/Si-Ge multi-quantum-well system is the
most promising material for the realization of a Si-compatible THz quantum cascade laser …

Antimony segregation in Ge (001) films grown by molecular beam epitaxy was studied. A
quantitative dependence of the Sb segregation ratio in Ge on growth temperature was …

In this work, we investigate the effective background charge density in intrinsic Si 0.06 Ge
0.94/Ge plastically relaxed heterostructures deposited on Si (001). Hall effect measurements …

Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over
existing III-V devices. Although coherent electron transport effects are known to be important …

SiGe quantum wells are promising candidates for the development of intersubband light
emitters and photodetectors operating at mid-and far-infrared wavelengths. By virtue of their …

We report electroluminescence originating from L-valley transitions in n-type Ge/Si 0.15 Ge
0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δ …

n-type Ge/SiGe asymmetric coupled quantum wells represent the building block of a variety
of nanoscale quantum devices, including recently proposed designs for a silicon-based THz …

We measured the non-radiative intersubband relaxation time in n-type modulation-doped
Ge/SiGe multi-quantum wells of different thickness by means of degenerate pump-probe …