The application of pulsed lasers to the study of Single-Event Effects (SEEs) in integrated
circuits and devices is described. The role of a pulsed laser is to provide spatial and …

Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure
modes in power MOSFETs [eg, single-event gate rupture (SEGR) and single-event burnout …

Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS Page 1 1900 IEEE
TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 57, NO. 4, AUGUST 2010 Sensitive Volume …

Eight commercially available n-channel power MOSFETs were exposed to high energy
spallation neutrons and thermal neutrons in separate experiments. Single event burnout …

The single event burnout (SEB) effects of SiC power MOSFET are investigated by
irradiations. An SEB is observed when drain biased above 400 V for 181Ta ion irradiation …

This paper presents 2-D numerical simulation results of single-event burnout (SEB) in power
planar vertical double-diffused MOSFET (VDMOSFET) with localized carrier lifetime control …

This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in
4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the …

We present backside laser testing of gallium nitride (GaN) power devices on Si substrate
using optical parameters compatible with three-photon absorption in GaN and single-photon …

Power MOSFETs are like most MOS transistors in operation and terminology [Taur01,
Mohan03]. Typical applications are a switching mode or amplification mode. Power …

This paper discusses issues concerning single-event burnout (SEB) and single-event gate
rupture (SEGR); explains and provides a basic overview of the preferred test conditions and …