The extremely high carrier mobility and the unique band structure, make graphene very
useful for field-effect transistor applications. According to several works, the primary …

Field emission electron sources in vacuum electronics are largely considered to achieve
faster response, higher efficiency and lower energy consumption in comparison with …

This study deals with the electrical transport in back‐gate field‐effect transistors with ultrathin
palladium diselenide (PdSe2) channels. The devices are normally‐on and exhibit dominant …

A photodetector with bias‐tuneable current is realized by adding a film of single‐walled
carbon nanotubes (CNT), forming a CNT/Si3N4/Si capacitor, to a prefabricated Pt …

This study reports the electrical transport and the field emission properties of individual multi‐
walled tungsten disulphide (WS2) nanotubes (NTs) under electron beam irradiation and …

We report the electrical characterization and field emission properties of MoS 2 bilayers
deposited on a SiO 2/Si substrate. Current–voltage characteristics are measured in the back …

We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm
from the 500 nm wide graphene conductive channel, using a single lithographic step. We …

The field emission properties of MoO2 nanostars grown on a silicon substrate and their
emission performance in various vacuum gaps are reported in this article. A new structure of …

We report the observation and characterization of field emission current from individual
single-and few-layer graphene flakes laid on a flat SiO 2/Si substrate. Measurements were …

Electrical characterization of few-layer MoS2-based field-effect transistors with Ti/Au
electrodes is performed in the vacuum chamber of a scanning electron microscope in order …