GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z Xing, S Li, L Luo, F Zeng… - … Science and Technology, 2023 - iopscience.iop.org
Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation
In the present work, the impact of ZrO2 gate dielectric thickness on the electrical
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …
[HTML][HTML] Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements
Recent demonstrations of grafted pn junctions combining n-type GaN with p-type
semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like …
semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like …
Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer
Y Zhang, L Xu, Y Gu, H Guo, H Jiang… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
A comprehensive study on dynamic characteristics of GaN MISHEMT with a 5nm-thick in-situ
SiN x dielectric is presented. Effects of both negative and positive gate bias on threshold …
SiN x dielectric is presented. Effects of both negative and positive gate bias on threshold …
Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric
X Zhang, X Wei, P Zhang, H Zhang, L Zhang, X Deng… - Electronics, 2022 - mdpi.com
This study has demonstrated AlGaN/GaN metal-insulator-semiconductor high electron
mobility transistors (MIS-HEMTs) on Si substrates with a SiNx/SiON composite gate …
mobility transistors (MIS-HEMTs) on Si substrates with a SiNx/SiON composite gate …
High-Performance TiO2 Thin-Film Transistors: In-Depth Investigation of the Correlation between Interface Traps and Oxygen Vacancies
The role of surface contamination, along with surface oxygen vacancies, plays a key role in
the overall carrier transport in thin-film transistors (TFTs). In this study, it is shown that the …
the overall carrier transport in thin-film transistors (TFTs). In this study, it is shown that the …
Electrical and photoelectrical characterization of Au/n-Si diode with sputtered ZrO2 interlayer
ZrO2 thin films were deposited on n-Si and quartz substrates by a reactive sputtering
technique. The morphological and optical characterization of a sputtered ZrO2 thin film …
technique. The morphological and optical characterization of a sputtered ZrO2 thin film …
High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric
In this work, TiO 2 thin films deposited by the atomic layer deposition (ALD) method were
treated with a special N 2 O plasma surface treatment and used as the gate dielectric for …
treated with a special N 2 O plasma surface treatment and used as the gate dielectric for …
Multilayer MoS2 Back‐Gate Transistors with ZrO2 Dielectric Layer Optimization for Low‐Power Electronics
Herein, high‐performance back‐gate molybdenum disulfide (MoS2) field‐effect transistors
(FETs) with high‐quality sub‐20 nm high‐k dielectric layers are developed for high …
(FETs) with high‐quality sub‐20 nm high‐k dielectric layers are developed for high …
Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors
G Jiang, P Cui, G Zhang, Y Zeng, G Yang, C Fu… - Microelectronics …, 2022 - Elsevier
Abstract An InAlN/GaN MIS-HEMT with ZrO 2 gate dielectric layer and a Schottky-gate
InAlN/GaN HEMT were fabricated. Subsequently, the influence of ZrO 2 gate dielectric layer …
InAlN/GaN HEMT were fabricated. Subsequently, the influence of ZrO 2 gate dielectric layer …