Thermal agglomeration of Si in an ultrathin (< 10 nm) bonded silicon-on-insulator (SOI)
wafer was studied by means of X-ray photoelectron spectroscopy (XPS) and atomic force …

A two-dimensional Si multidot channel field-effect transistor is fabricated from a silicon-on-
insulator material and the electrical characteristics are studied. The multidots are formed …

Single-hole transport in a two-dimensional Si multidot-channel field-effect transistor is
studied. It is found that the single-hole-tunneling current fluctuates in the particular ranges of …

Single-electron transistor drain current is studied as a function of the temperature. A current
conduction model based on the physical properties of the tunnel junctions is proposed to …

We have numerically studied the single-charge transfer operation in two-dimensional (2D)
random-multidot-channel field-effect transistors (FETs) using orthodox theory of the …

A single-photon detection using a Si-based two-dimensional (2D) multiple-tunnel-junction
field-effect transistor (FET) is reported. The single photon is detected as a random telegraph …

Self-aligned Si-quantum-dots (Si-QDs) with an areal density as high as∼ 10 11 cm− 2 have
been fabricated on ultrathin SiO 2 by using a∼ 4.5 nm thick poly-Si on insulator (SOI) …

A silicon-on-insulator (SOI) structure with a thin (typically 20 nm) Si layer and an ultrathin (2
nm) thermally grown buried SiO 2 layer, which is a key structure in novel Si devices, was …

We have investigated the effect of illumination on the Coulomb blockade (CB) characteristics
of Si two-dimensional multidot field-effect transistors. Some of the transistors exhibit …

Ce travail porte sur le développement d'un procédé de fabrication de transistor mono-
électronique ('single-electron transistor,'SET). Il dresse un portrait de l'état de l'art actuel et …