We compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-matched to
silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first …

Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use
of lasers on silicon for photonic integration. The authors demonstrate the need for efficient …

In this work, we investigate correlations between optical and electro-optical properties of
GaAsPN/GaP p–i–n solar cells grown by MBE on GaP (001) substrates. A …

Potentialities of density functional theory (DFT) based methodologies are explored for
photovoltaic materials through the modeling of the structural and optoelectronic properties of …

The 8-band kp Hamiltonian is applied to calculate electronic band structure and material
gain in III-V-Bi quantum wells (QWs) grown on GaSb substrates. We analyzed three Bi …

In this paper, we present a comprehensive study of high efficiencies tandem solar cells
monolithically grown on a silicon substrate using GaAsPN absorber layer. InGaAs (N) …

In this work, we demonstrate how the classical concept of band gap engineering usually
used in III–V semiconductor devices can be extended to the engineering of the band lineup …

The optical absorption and thermal conductivity of GaAsPN absorbers are investigated by
means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) …

The electronic band structure of phosphorus-rich GaNxPyAs1− x− y alloys (x~ 0.025 and y≥
0.6) is studied experimentally using optical absorption, photomodulated transmission …

We study the complex electronic band structure of low In content InGaAs/GaP quantum dots.
A supercell extended-basis tight-binding model is used to simulate the electronic and the …