A review of advances in pixel detectors for experiments with high rate and radiation

M Garcia-Sciveres, N Wermes - Reports on Progress in Physics, 2018 - iopscience.iop.org
The large Hadron collider (LHC) experiments ATLAS and CMS have established hybrid
pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and …

Displacement damage in silicon detectors for high energy physics

M Moll - IEEE Transactions on Nuclear Science, 2018 - ieeexplore.ieee.org
In this paper, we review the radiation damage issues caused by displacement damage in
silicon sensors operating in the harsh radiation environments of high energy physics …

[图书][B] Evolution of silicon sensor technology in particle physics

F Hartmann - 2009 - Springer
In the post era of the Z and W discovery, after the observation of jets at UA1 and UA2 at
CERN, John Ellis visioned at a HEP conference at Lake Tahoe, California, in 1983 “To …

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO x RRAM

FF Athena, MP West, J Hah, R Hanus… - Journal of Materials …, 2022 - pubs.rsc.org
HfOx-Based resistive random-access memory (RRAM) devices are being widely considered
as both non-volatile memories for digital computation and synaptic memory for …

Investigation of structural and optical properties of MAPbBr 3 monocrystals under fast electron irradiation

A Ishteev, K Konstantinova, G Ermolaev… - Journal of Materials …, 2022 - pubs.rsc.org
Halide perovskites have demonstrated great potential for photovoltaics and detector
applications, due to the strong absorption, large mobility lifetime product, structural defect …

Defect and structural evolution under high-energy ion irradiation informs battery materials design for extreme environments

MM Rahman, WY Chen, L Mu, Z Xu, Z Xiao… - Nature …, 2020 - nature.com
Understanding defect evolution and structural transformations constitutes a prominent
research frontier for ultimately controlling the electrochemical properties of advanced battery …

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI-and Cz-silicon

C Liao, E Fretwurst, E Garutti, J Schwandt… - Nuclear Instruments and …, 2023 - Elsevier
This study focuses on the properties of the B i O i (interstitial Boron–interstitial Oxygen) and
C i O i (interstitial Carbon–interstitial Oxygen) defect complexes by 5.5 MeV electrons in low …

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

P Hazdra, J Vobecký - physica status solidi (a), 2019 - Wiley Online Library
Radiation damage produced in 4H‐SiC n‐epilayers by electrons of different energies is
presented. Junction barrier Schottky power SiC diodes are irradiated with 1.05, 2.1, 5, and …

Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

C Liao, E Fretwurst, E Garutti, J Schwandt… - Nuclear Instruments and …, 2024 - Elsevier
In this work, the effects of 60 Co γ-ray irradiation on high resistivity p-type diodes have been
investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and 2 MGy. Both …

[HTML][HTML] Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors

A Himmerlich, N Castello-Mor, EC Rivera… - Nuclear Instruments and …, 2023 - Elsevier
High-energy physics detectors with internal charge multiplication, like Low Gain Avalanche
Detectors (LGADs), that will be used for fast timing in the High Luminosity LHC experiments …