In this paper, a review of the developments in MRAM technology over the past 20 years is
presented. The various MRAM generations are described with a particular focus on spin …

Recent studies have shown that nonlinear magnetization dynamics excited in
nanostructured ferromagnets are applicable to brain-inspired computing such as physical …

Interlayer exchange coupling in transition metal multilayers has been intensively studied for
more than three decades and is incorporated into almost all spintronic devices. With the …

In this paper, we show that IrFe spacer layers enable the control of noncollinear interlayer
exchange coupling between ferromagnetic Co layers over a spacer layer composition and …

Enhancing the performance of magnetic random access memories (MRAMs) is crucial,
considering speed, energy efficiency, and endurance. Spin-orbit torque-based MRAMs offer …

Ultrathin L 1 0 FePt films with different c-axis orientations relative to the film plane are
promising candidates for data storage materials. In this work, within the framework of density …

Electronic spins provide an additional degree of freedom that can be used in modern spin-
based electronic devices. Some benefits of spintronic devices include nonvolatility, energy …

We report on the experimental investigation of the perpendicular magnetic anisotropy in
Pt/[Co/Ni] N/Ir multilayers. Broadband ferromagnetic resonance (FMR) and polar angle …

Spintronic devices would greatly benefit from a noncollinear alignment between
magnetizations of adjacent ferromagnetic layers for maximum performance and reliability …

Write error rate (WER) in voltage-induced magnetization switching of a conically magnetized
free layer with an elliptic cylinder shape is numerically calculated on the basis of the …