A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …

The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …

A Ferroelectric Field-Effect Transistor (FEFET) is a promising candidate for next-generation
memory devices because it offers numerous advantages, such as its high speed, low energy …

This letter studies the impact of multi-domain dynamics on the memory window (MW) of a
Ferroelectric FET (FeFET). The memory window primarily depends on the density of …

In this letter, we present a compact model of ferroelectric field-effect-transistor (FEFET). The
model consists of a ferroelectric (FE) capacitor model and a Berkeley Short-channel IGFET …

In this work, we investigate the device-to-device variations in the remanent polarization of
metal–ferroelectric–insulator–metal stacks based on ferroelectric hafnium–zirconium–oxide …

Single ferroelectric-FET (FeFET) reconfigurable logic-in-memory is an attractive beyond-von-
Neumann scheme for data-centric computing. Different from using body-to-source voltage to …

This Letter pioneers an investigation into the influence of temperature on threshold voltage
(V TH) instability under negative bias in ferroelectric charge trap gate stack (FEG) high …

Device-to-device variations in ferroelectric (FE) hafnium oxide-based devices pose a crucial
challenge that limits the otherwise promising capabilities of this technology. Earlier …

We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the
Si (100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications …