Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous
reactants and an exposed solid surface to deposit highly conformal coatings with a thickness …

This review provides an overview of area-selective thin film deposition (ASD) with a primary
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …

In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …

Despite the rapid increase in the number of newly developed processes, area-selective
atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low …

Area-selective atomic layer deposition (ALD) is currently attracting significant interest as a
solution to the current challenges in alignment that limit the development of sub-5 nm …

In the following review, the authors describe how the kinetics of film growth can be controlled
in innovative ways to achieve the deposition of conformal, superconformal, area-selective …

A methodology to modulate precursor-surface reactivity and tailor the growth per cycle in
Atomic Layer Deposition (ALD) is described. Our approach relies on in situ surface …

We report wafer-scale growth of atomically thin, three-dimensional (3D) van der Waals
(vdW) semiconductor membranes. By controlling the growth kinetics in the near-equilibrium …

Although area-selective deposition (ASD) has developed to augment lithographic patterning
of nanoscale device features, computational modeling of ASD remains limited. As pitch sizes …

New lanthanide N, N-dimethylaminodiboranate (DMADB) complexes of stoichiometry Ln
(H3BNMe2BH3) 3 and Ln (H3BNMe2BH3) 3 (thf) have been prepared, where Ln= yttrium …