Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Y Meng, W Wang, W Wang, B Li, Y Zhang… - Advanced …, 2024 - Wiley Online Library
Anti‐ambipolar heterojunctions are vital in constructing high‐frequency oscillators, fast
switches, and multivalued logic (MVL) devices, which hold promising potential for next …

Recent advances in two‐dimensional heterostructures: From band alignment engineering to advanced optoelectronic applications

X Sun, C Zhu, X Zhu, J Yi, Y Liu, D Li… - Advanced Electronic …, 2021 - Wiley Online Library
Dynamically engineering the band alignment between materials, especially 2D
semiconductors, is critically important for the design of novel devices with superior functions …

Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

A Varghese, D Saha, K Thakar, V Jindal, S Ghosh… - Nano …, 2020 - ACS Publications
Pn heterojunctions comprising layered van der Waals (vdW) semiconductors have been
used to demonstrate current-rectifiers, photodetectors, and photovoltaic devices. However, a …

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

W Wang, W Wang, Y Meng, Q Quan, Z Lai, D Li, P Xie… - ACS …, 2022 - ACS Publications
The incapability of modulating the photoresponse of assembled heterostructure devices has
remained a challenge for the development of optoelectronics with multifunctionality. Here, a …

An Optoelectronic Synapse Based on Two‐Dimensional Violet Phosphorus Heterostructure

X Liu, S Wang, Z Di, H Wu, C Liu, P Zhou - Advanced Science, 2023 - Wiley Online Library
Neuromorphic computing can efficiently handle data‐intensive tasks and address the
redundant interaction required by von Neumann architectures. Synaptic devices are …

Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors

E Wu, Y Xie, Q Liu, X Hu, J Liu, D Zhang, C Zhou - ACS nano, 2019 - ACS Publications
van der Waals (vdW) p–n heterojunctions formed by two-dimensional nanomaterials exhibit
many physical properties and deliver functionalities to enable future electronic and …

Low Contact Barrier in 2H/1T′ MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

X Zhang, Z Jin, L Wang, JA Hachtel… - … applied materials & …, 2019 - ACS Publications
Metal–semiconductor contact has been a critical topic in the semiconductor industry
because it influences device performance remarkably. Conventional metals have served as …

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

E Elahi, M Ahmad, A Dahshan, M Rabeel, S Saleem… - Nanoscale, 2024 - pubs.rsc.org
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical
characteristics have attracted significant interest from the scientific and industrial worlds in …

Polarity‐Switchable and Self‐Driven Photo‐Response Based on Vertically Stacked Type‐III GeSe/SnS2 Heterojunction

L Wu, W Gao, Y Sun, MM Yang, Z Zheng… - Advanced Materials …, 2022 - Wiley Online Library
Abstract 2D van der Waals (vdWs) heterostructure‐based multifunctional field effect
transistor (FET) has brought about novel physical phenomena. Impressively, anti‐ambipolar …

A bi-anti-ambipolar field effect transistor

CR Paul Inbaraj, RJ Mathew, RK Ulaganathan… - ACS …, 2021 - ACS Publications
Multistate logic is recognized as a promising approach to increase the device density of
microelectronics, but current approaches are offset by limited performance and large circuit …