Metrology for the next generation of semiconductor devices
NG Orji, M Badaroglu, BM Barnes, C Beitia… - Nature …, 2018 - nature.com
The semiconductor industry continues to produce ever smaller devices that are ever more
complex in shape and contain ever more types of materials. The ultimate sizes and …
complex in shape and contain ever more types of materials. The ultimate sizes and …
Deep subwavelength nanometric image reconstruction using Fourier domain optical normalization
Quantitative optical measurements of deep subwavelength, three-dimensional (3D),
nanometric structures with sensitivity to sub-nanometer details address a ubiquitous …
nanometric structures with sensitivity to sub-nanometer details address a ubiquitous …
Evaluation of carbon nanotube probes in critical dimension atomic force microscopes
J Choi, BC Park, SJ Ahn, DH Kim… - Journal of Micro …, 2016 - spiedigitallibrary.org
The decreasing size of semiconductor features and the increasing structural complexity of
advanced devices have placed continuously greater demands on manufacturing metrology …
advanced devices have placed continuously greater demands on manufacturing metrology …
A multi-edge study: investigating Co oxidation states of pristine LiNi x Mn y Co 1− x− y O 2 cathode materials by high energy-resolution X-ray spectrometry
K Bzheumikhova, C Zech, K Schüler… - Physical Chemistry …, 2024 - pubs.rsc.org
The investigation of Co oxidation states in pristine LiNixMnyCo1− x− yO2 (NMC) cathodes
(NMC111, NMC622, NMC811) has been a subject of ongoing debate, with conflicting …
(NMC111, NMC622, NMC811) has been a subject of ongoing debate, with conflicting …
[HTML][HTML] Optimizing noise for defect analysis with through-focus scanning optical microscopy
Through-focus scanning optical microscopy (TSOM) shows promise for patterned defect
analysis, but it is important to minimize total system noise. TSOM is a three-dimensional …
analysis, but it is important to minimize total system noise. TSOM is a three-dimensional …
Research Update: Electron beam-based metrology after CMOS
The magnitudes of the challenges facing electron-based metrology for post-CMOS
technology are reviewed. Directed self-assembly, nanophotonics/plasmonics, and resistive …
technology are reviewed. Directed self-assembly, nanophotonics/plasmonics, and resistive …
Metrology and inspection required for next generation lithography
M Asano, R Yoshikawa, T Hirano, H Abe… - Japanese Journal of …, 2017 - iopscience.iop.org
We summarize the metrology and inspection required for the development of nanoimprint
lithography (NIL) and directed self-assembly (DSA), which are recognized as candidates for …
lithography (NIL) and directed self-assembly (DSA), which are recognized as candidates for …
Contrasting conventional and machine learning approaches to optical critical dimension measurements
Accurate, optics-based measurement of feature sizes at deep sub-wavelength dimensions
has been conventionally challenged by improved manufacturing, including smaller …
has been conventionally challenged by improved manufacturing, including smaller …
Advancements in metrology for advanced semiconductor packaging
In the wake of continuous miniaturization, optical metrology has solidified its role as an
essential instrument in semiconductor manufacturing, chiefly due to its non-invasive, high …
essential instrument in semiconductor manufacturing, chiefly due to its non-invasive, high …
Statistical hierarchical reconstruction from metrology data
SI Mossavat, R Dirks, HAJ Cramer - US Patent 10,627,213, 2020 - Google Patents
A method including obtaining measurement results of a device manufacturing process or a
product thereof, obtain ing sets of one or more values of one or more parameters of a …
product thereof, obtain ing sets of one or more values of one or more parameters of a …