Recent advances in creating complex oxide heterostructures, interfaces formed between two different transition-metal oxides, have heralded a new era of materials and physics research …
As quantum technologies develop, a specific class of electrically conducting materials is rapidly gaining interest because they not only form the core quantum‐enabled elements in …
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO 3/SrTiO 3 interface. Bridges with lateral …
Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical …
Tunable spin-orbit interaction (SOI) is an important feature for future spin-based devices. In the presence of a magnetic field, SOI induces an asymmetry in the energy bands, which can …
High-mobility complex-oxide heterostructures and nanostructures offer new opportunities for extending the paradigm of quantum transport beyond the realm of traditional III-V or carbon …
A Ron, Y Dagan - Physical review letters, 2014 - APS
We grow a tiled structure of insulating two-dimensional LaAlO 3/SrTiO 3 interfaces composed of alternating one and three LaAlO 3 unit cells. The boundary between two tiles is …
Resistance as a function of temperature down to 20 mK and magnetic fields up to 18 T for various carrier concentrations is measured for nanowires made from the SrTiO 3/LaAlO 3 …
We probe the existence of large correlated non-Gaussian phase fluctuations in the vicinity of the superconducting phase transition in the conducting layer residing at the interface of …