Junction temperature sensing is an integral part of both online and offline condition
monitoring where direct access to the bare die surface is not available. Given a defined …

The performance of SiC MOSFETs is limited by many defects at the SiC/SiO 2 interface.
However, there are no fully consistent atomic models of these defects or how their large …

In this article, a method for evaluating the implications of threshold voltage (VTH) drift from
gate voltage stress in SiC MOSFETs is presented. By exploiting the Miller coupling between …

Si nanoparticles have been synthesized from rice husk. Adding KBr during the reduction of
the magnesiothermic method in the synthesis of Si nanoparticles is effective as a scavenger …

Although the irreplaceable position of silicon (Si) semiconductor materials in the field of
information has become a consensus, new materials continue to be sought to expand the …

This study examines the electrical and optical properties of p-Si/n-SiC heterojunctions
subjected to UV and visible light in addition to the conduction mechanism of the device. The …

Plasmonically enhanced light absorption in Schottky barrier photodetectors (PDs) can be
achieved by engineering metallic nanostructures. In this context, gold (Au) gratings on …

The threshold voltage (V_TH) instability of silicon carbon (SiC) metal-oxide semiconductor
field-effect transistors (MOSFETs) are investigated by pulsed bias characterizations. The …

Silicon carbide (4H) based metal–oxide–semiconductor field-effect transistors provide
capabilities in high power and high temperature inaccessible to silicon. However, the …

To clarify the cause of the low channel conductivity at the SiO 2/4H–SiC interface, the
wavefunction at the SiC conduction band minimum was calculated using density functional …