BSIM-IMG: A compact model for ultrathin-body SOI MOSFETs with back-gate control
In this paper, we present an accurate and computationally efficient model for circuit
simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control. This …
simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control. This …
Leti-UTSOI2. 1: A compact model for UTBB-FDSOI technologies—Part I: Interface potentials analytical model
T Poiroux, O Rozeau, P Scheer… - … on Electron Devices, 2015 - ieeexplore.ieee.org
A detailed presentation of the latest version of the Leti-UTSOI compact model is provided.
Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin …
Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin …
UTSOI2: A complete physical compact model for UTBB and independent double gate MOSFETs
T Poiroux, O Rozeau, S Martinie… - 2013 IEEE …, 2013 - ieeexplore.ieee.org
In this paper, we present the first complete compact model dedicated to Ultra-Thin Body and
Box and Independent Double Gate MOSFETs based on an explicit formulation of front and …
Box and Independent Double Gate MOSFETs based on an explicit formulation of front and …
Analytical compact model for lightly doped nanoscale ultrathin-body and box SOI MOSFETs with back-gate control
TA Karatsori, A Tsormpatzoglou… - … on Electron Devices, 2015 - ieeexplore.ieee.org
An analytical drain-current compact model for lightly doped short-channel ultrathin-body and
box fully depleted silicon-on-insulator MOSFETs with back-gate control is presented. The …
box fully depleted silicon-on-insulator MOSFETs with back-gate control is presented. The …
A physically based compact model for IGZO transistors
R Rios, D Morris, T Takeuchi… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
A thin film transistor (TFT) model applicable to circuit design is presented. The model is
based on a general solution of the vertical 1-D Poisson equation, valid for asymmetric and …
based on a general solution of the vertical 1-D Poisson equation, valid for asymmetric and …
A simple charge model for symmetric double-gate MOSFETs adapted to gate-oxide-thickness asymmetry
S Jandhyala, R Kashyap, C Anghel… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
Surface-potential-based compact charge models for symmetric double-gate metal-oxide-
semiconductor field-effect transistors (SDG-MOSFETs) are based on the fundamental …
semiconductor field-effect transistors (SDG-MOSFETs) are based on the fundamental …
Surface potential equation for low effective mass channel common double-gate MOSFET
AS Chakraborty, S Mahapatra - IEEE Transactions on Electron …, 2017 - ieeexplore.ieee.org
Formulation of accurate yet computationally efficient surface potential equation (SPE) is the
fundamental step toward developing compact models for low effective mass channel …
fundamental step toward developing compact models for low effective mass channel …
An efficient robust algorithm for the surface-potential calculation of independent DG MOSFET
S Jandhyala, S Mahapatra - IEEE Transactions on Electron …, 2011 - ieeexplore.ieee.org
Although the recently proposed single-implicit-equation-based input voltage equations
(IVEs) for the independent double-gate (IDG) MOSFET promise faster computation time than …
(IVEs) for the independent double-gate (IDG) MOSFET promise faster computation time than …
A short-channel common double-gate MOSFET model adapted to gate oxide thickness asymmetry
N Sharan, S Mahapatra - IEEE Transactions on Electron …, 2014 - ieeexplore.ieee.org
Existing compact models for common double-gate (CDG) MOSFETs are based on the
fundamental assumption of having symmetric gate oxide thickness. In this paper, we …
fundamental assumption of having symmetric gate oxide thickness. In this paper, we …
Compact charge model for independent-gate asymmetric DGFET
G Dessai, W Wu, G Gildenblat - IEEE transactions on electron …, 2010 - ieeexplore.ieee.org
Analytical expressions for terminal charges of an independent-gate asymmetric double gate
MOSFET (DGFET) are derived. The new charge model is C∞ continuous, valid for all bias …
MOSFET (DGFET) are derived. The new charge model is C∞ continuous, valid for all bias …