Digital circuit design challenges and opportunities in the era of nanoscale CMOS

BH Calhoun, Y Cao, X Li, K Mai… - Proceedings of the …, 2008 - ieeexplore.ieee.org
Well-designed circuits are one key ldquoinsulatingrdquo layer between the increasingly
unruly behavior of scaled complementary metal-oxide-semiconductor devices and the …

System technology co-optimization for advanced integration

S Pal, A Mallik, P Gupta - Nature Reviews Electrical Engineering, 2024 - nature.com
Advanced integration and packaging will drive the scaling of computing systems in the next
decade. Diversity in performance, cost and scale of the emerging systems implies that …

Cell circuit and layout with linear finfet structures

ST Becker - US Patent 9,563,733, 2017 - Google Patents
(57) ABSTRACT A cell circuit and corresponding layout is disclosed to include linear-
shaped diffusion fins defined to extend over a Substrate in a first direction so as to extend …

Finfet transistor circuit

ST Becker, MC Smayling, D Gandhi, J Mali… - US Patent …, 2014 - Google Patents
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state
components formed in or on a common substrate including semiconductor components …

Semiconductor device with linearly restricted gate level region including two transistors of first type and two transistors of second type with offset gate contacts

ST Becker, MC Smayling - US Patent 8,258,547, 2012 - Google Patents
(57) ABSTRACT A restricted layout region includes a diffusion level layout including a
number of diffusion region layout shapes that de? ne at least one p-type diffusion region and …

Semiconductor device having at least three linear-shaped electrode level conductive features of equal length positioned side-by-side at equal pitch

ST Becker, MC Smayling - US Patent 8,058,671, 2011 - Google Patents
(57) ABSTRACT A semiconductor device includes a Substrate portion that includes a
plurality of diffusion regions that include at least one p-type diffusion region and at least one …

Semiconductor device having two pairs of transistors of different types formed from shared linear-shaped conductive features with intervening transistors of common …

ST Becker, MC Smayling - US Patent 8,035,133, 2011 - Google Patents
(57) ABSTRACT A semiconductor device includes a Substrate portion having a plurality of
diffusion regions defined in a non-symmetrical manner relative to a virtual line defined to …

Semiconductor device and associated layouts having transistors formed from six linear conductive segments with gate electrode-to-gate electrode connection through …

ST Becker, MC Smayling - US Patent 8,022,441, 2011 - Google Patents
(57) ABSTRACT A semiconductor device is disclosed as having a substrate portion that
includes a plurality of diffusion regions that include at least one p-type diffusion region and …

Methods for defining contact grid in dynamic array architecture

J Hong, S Kornachuk, ST Becker - US Patent 8,225,261, 2012 - Google Patents
First and second virtual grates are defined as respective sets of parallel virtual lines
extending across a layout area in first and second perpendicular directions, respectively …

[图书][B] EDA for IC implementation, circuit design, and process technology

L Lavagno, L Scheffer, G Martin - 2018 - books.google.com
Presenting a comprehensive overview of the design automation algorithms, tools, and
methodologies used to design integrated circuits, the Electronic Design Automation for …