Gallium nitride (GaN) has attracted much attention due to its outstanding characteristics. It
may replace conventional semiconductor materials, such as silicon, that are approaching …

Defect-selective etching methods are commonly used for a quick assessment of
crystallographic and chemical inhomogeneities in various semiconductors, including …

Electrochemical etching having large selectivity based on the conductivity of n‐type GaN
was investigated to demonstrate the feasibility of novel optical and microelectromechanical …

Photoelectrochemical (PEC) oxidation is currently employed to improve the removal rates of
surface polishing methods applied to gallium nitride (GaN) wafers, such as PEC mechanical …

We report on the interface properties of thermally oxidized n-GaN metal–oxide–
semiconductor capacitors fabricated on sapphire substrates. 100-nm-thick β-Ga 2 O 3 was …

Two defect-selective etching approaches used for revealing and analysis of defects in wide-
band-gap semiconductors (GaN, SiC) are described in detail:(i) orthodox etching in molten …

In this paper, a comprehensive quantitative investigation is conducted on III-N
electrochemical nanomachining to explore the underlying mechanisms. An electric circuit …

A study of the electrochemistry of n-type GaN in an alkaline peroxydisulfate solution was
used to explain the mechanism of photoetching of the semiconductor under open-circuit …

This article reports the properties and the behavior of GaN during the photoelectrochemical
etching process using four different electrolytes. The measurements show that the porosity …

It remains a big challenge to elongate one-dimensional (1D) semiconductor nanowires
(NWs), which can be attractive platforms for miniaturizing and/or integrating macroscopic …