Cryogenic memory technologies

S Alam, MS Hossain, SR Srinivasa, A Aziz - Nature Electronics, 2023 - nature.com
Cryogenic data storage technology is of use in superconducting single-flux quantum
electronics and quantum computing. However, the lack of compatible cryogenic memory …

From MTJ device to hybrid CMOS/MTJ circuits: A review

VK Joshi, P Barla, S Bhat, BK Kaushik - IEEE Access, 2020 - ieeexplore.ieee.org
Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …

Cooperative control of perpendicular magnetic anisotropy via crystal structure and orientation in freestanding SrRuO3 membranes

Z Lu, Y Yang, L Wen, J Feng, B Lao, X Zheng… - npj Flexible …, 2022 - nature.com
Flexible magnetic materials with robust and controllable perpendicular magnetic anisotropy
(PMA) are highly desirable for developing flexible high-performance spintronic devices …

A cryogenic memory array based on superconducting memristors

S Alam, MS Hossain, A Aziz - Applied Physics Letters, 2021 - pubs.aip.org
A scalable cryogenic memory system is one of the prime requirements for the
implementation of practical quantum computers, large-scale single flux quantum circuits …

Finite element approach for the simulation of modern MRAM devices

S Fiorentini, NP Jørstad, J Ender, RL de Orio… - Micromachines, 2023 - mdpi.com
Because of their nonvolatile nature and simple structure, the interest in MRAM devices has
been steadily growing in recent years. Reliable simulation tools, capable of handling …

Exploiting STT-MRAMs for cryogenic non-volatile cache applications

E Garzón, R De Rose, F Crupi… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
This paper evaluates the potential of spin-transfer torque magnetic random-access
memories (STT-MRAMs) operating at cryogenic temperatures. Our study was carried out at …

CryoCiM: Cryogenic compute-in-memory based on the quantum anomalous Hall effect

S Alam, MM Islam, MS Hossain, A Jaiswal… - Applied Physics …, 2022 - pubs.aip.org
The scaling of the already matured complementary metal-oxide-semiconductor technology
is steadily approaching its physical limit, motivating the quest for a suitable alternative …

Simulation analysis of DMTJ-based STT-MRAM operating at cryogenic temperatures

E Garzón, R De Rose, F Crupi… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
This article investigates spin-transfer torque magnetic random access memories (STT-
MRAMs) based on double-barrier magnetic tunnel junction (DMTJ) with two reference layers …

A low-energy DMTJ-based ternary content-addressable memory with reliable sub-nanosecond search operation

E Garzón, L Yavits, G Finocchio, M Carpentieri… - IEEE …, 2023 - ieeexplore.ieee.org
In this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-
Magnetic-Tunnel-Junction (10T2DMTJ) non-volatile (NV) ternary content-addressable …

Energy-efficient and reliable inference in nonvolatile memory under extreme operating conditions

S Resch, SK Khatamifard, ZI Chowdhury… - ACM Transactions on …, 2022 - dl.acm.org
Beyond-edge devices can operate outside the reach of the power grid and without batteries.
Such devices can be deployed in large numbers in regions that are difficult to access. Using …