This review presents the author's view on modern trends in the development of charged
particle accelerators for various applications, which is based on his own experience in this …

A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …

Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …

Photoconductive and heterojunction devices prepared based on n-type β-Ga 2 O 3 have
been extensively studied in the field of solar-blind ultraviolet (UV) detectors. However, for …

Significant enhancement in green emission by integrating a thin AlInN barrier layer, or
interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs …

We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-
photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting …

Gallium oxide has been attracting much interest due to its tremendous potential for power
device application. The (B x Ga 1− x) 2 O 3 ternary alloys of monoclinic and orthorhombic …

We report on the electronic properties of β-(In x Ga 1-x) 2 O 3 alloys with different In-content
up to 18.75% using density functional theory (DFT) calculations. The effect of In-content on …

A physically intuitive current injection efficiency model for a GaN: Eu quantum well (QW) has
been developed to clarify the necessary means to achieve device quantum efficiency higher …

Shift of the emission spectrum and the efficiency loss with the operating current are the
major challenges in the conventional InGaN/GaN QW LEDs. Several approaches are being …