Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy
GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si (111)
substrates covered by a thin oxide layer using different substrate temperatures and growth …
substrates covered by a thin oxide layer using different substrate temperatures and growth …
Growth of pseudomorphic InGaAs/GaAs quantum wells on [111] B GaAs for strained layer, piezoelectric, optoelectronic devices
R Grey, JPR David, G Hill, AS Pabla, MA Pate… - Microelectronics …, 1995 - Elsevier
Pseudomorphically strained InGaAs/GaAs quantum wells grown on [111] B oriented GaAs
substrates incorporate strong piezoelectric fields. Quantum confined interband optical …
substrates incorporate strong piezoelectric fields. Quantum confined interband optical …
Atomic layer epitaxy of GaAs and GaAsxP1− x on nominally oriented GaAs (111) substrates with high quality surface and interfaces
JS Lee, S Iwai, H Isshiki, T Meguro, T Sugano… - Journal of crystal …, 1996 - Elsevier
Layer-by-layer growth of GaAs and GaAsxP1− x (x= 0.7− 0.8) on nominally oriented (111)
substrates has been performed by atomic layer epitaxy (ALE). The ideal growth rate of one …
substrates has been performed by atomic layer epitaxy (ALE). The ideal growth rate of one …
Growth and nonlinear optical properties of GaAs absorber layers for semiconductor saturable absorber mirrors
S Schön, M Haiml, M Achermann… - Journal of Vacuum Science …, 2000 - pubs.aip.org
Absorber layers of semiconductor saturable absorber mirrors are required to show high
absorption modulation with recovery times on the order of 100 fs and low nonsaturable …
absorption modulation with recovery times on the order of 100 fs and low nonsaturable …
Frequency analysis of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on nominally oriented (111) B …
BJ Garcia, C Fontaine, A Muñoz‐Yagüe - Applied physics letters, 1995 - pubs.aip.org
Frequency analysis of reflection high‐energy electron diffraction (RHEED) intensity
oscillations during GaAs growth by molecular beam epitaxy on nominally‐oriented (111) B …
oscillations during GaAs growth by molecular beam epitaxy on nominally‐oriented (111) B …
Growth optimization and optical properties of GaAs-(Ga, Al) As quantum well structures on UV-ozone prepared nominal (111) B GaAs surfaces
GaAs and (Ga, Al) As GaAs quantum well (QW) structures have been grown by molecular
beam epitaxy on nominal (111) B oriented GaAs substrates. The substrate preparation …
beam epitaxy on nominal (111) B oriented GaAs substrates. The substrate preparation …
Spin Manipulation in (111) Quantum Wells
A Balocchi, T Amand, X Marie - Contemporary Topics in …, 2017 - World Scientific
This chapter presents a review of the electron spin dynamics and its control possibilities in
(111)-oriented zinc-blende quantum well semiconductor structures, as a result of the …
(111)-oriented zinc-blende quantum well semiconductor structures, as a result of the …
Desarrollo de fotodetectores bi-color de infrarrojos con pozos cuánticos de GaAs/AlGaAs
ÁG Fernández González - 2000 - oa.upm.es
En esta Tesis Doctoral se establece una Tecnología propia para el desarrollo y fabricación
de dispositivos de detección de infrarrojo que trabajen simultáneamente en dos de las …
de dispositivos de detección de infrarrojo que trabajen simultáneamente en dos de las …