[HTML][HTML] Wide bandgap semiconductor-based integrated circuits
Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …
traditional semiconductors such as silicon, rendering them very promising for applications in …
Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors
Wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors in n‐type metal–
oxide–semiconductor (n‐MOS) integrated circuits (ICs) are increasingly being explored for …
oxide–semiconductor (n‐MOS) integrated circuits (ICs) are increasingly being explored for …
Wide-range Threshold Voltage Tunable β-Ga2O3 FETs with a Sputtered AlScN Ferroelectric Gate Dielectric
In this study, we demonstrate a-Ga2O3 ferroelectric field-effect transistor (Fe-FET) using a
sputtered aluminum scandium nitride (AlScN) gate dielectric. The device exhibits a steep …
sputtered aluminum scandium nitride (AlScN) gate dielectric. The device exhibits a steep …
[HTML][HTML] Pseudo-source gated beta-gallium oxide MOSFET
This study demonstrates pseudo-source-gated beta-gallium oxide (β-Ga 2 O 3) metal oxide
semiconductor field effect transistors (MOSFETs). The proposed pseudo-source gated …
semiconductor field effect transistors (MOSFETs). The proposed pseudo-source gated …
Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates
We report on the demonstration of β-Ga 2 O 3 MOSFETs fabricated on 1-in. bulk substrates
using metalorganic vapor phase epitaxy (MOVPE) with disilane (Si 2 H 6) as the silicon …
using metalorganic vapor phase epitaxy (MOVPE) with disilane (Si 2 H 6) as the silicon …
Quasi-2D high mobility channel E-mode β-Ga2O3 MOSFET with Johnson FOM of 7.56 THz· V
XC Wang, XL Lu, YL He, F Zhang, Y Shao, P Liu… - Applied Physics …, 2024 - pubs.aip.org
In this Letter, an enhancement mode (E-mode) β-Ga 2 O 3 metal-oxide-semiconductor field-
effect transistor (MOSFET) with quasi-two-dimensional channel was reported, and the …
effect transistor (MOSFET) with quasi-two-dimensional channel was reported, and the …
Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate
Aluminum nitride (AlN) is a promising ultrawide bandgap material with significant
advantages for power electronics and optoelectronic applications due to its high breakdown …
advantages for power electronics and optoelectronic applications due to its high breakdown …
[HTML][HTML] Demonstration of normally OFF beta-gallium oxide monolithic bidirectional switch for AC switching applications
In this work, we report on the beta-gallium oxide (β-Ga 2 O 3) monolithic bidirectional switch.
The as-fabricated switch works on enhancement mode operation with a threshold voltage …
The as-fabricated switch works on enhancement mode operation with a threshold voltage …