Scaling silicon-based quantum computing using CMOS technology
As quantum processors grow in complexity, attention is moving to the scaling prospects of
the entire quantum computing system, including the classical support hardware. Recent …
the entire quantum computing system, including the classical support hardware. Recent …
A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics
Quantum computing (QC) has already entered the industrial landscape and several
multinational corporations have initiated their own research efforts. So far, many of these …
multinational corporations have initiated their own research efforts. So far, many of these …
Theoretical limit of low temperature subthreshold swing in field-effect transistors
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs
that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical …
that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical …
Compact modeling of temperature effects in FDSOI and FinFET devices down to cryogenic temperatures
We present compact models that capture published cryogenic temperature effects on silicon
carrier mobility and velocity saturation, as well as fully depleted silicon on insulator (FDSOI) …
carrier mobility and velocity saturation, as well as fully depleted silicon on insulator (FDSOI) …
Ultrasteep slope cryogenic FETs based on bilayer graphene
E Icking, D Emmerich, K Watanabe, T Taniguchi… - Nano Letters, 2024 - ACS Publications
Cryogenic field-effect transistors (FETs) offer great potential for applications, the most
notable example being classical control electronics for quantum information processors. For …
notable example being classical control electronics for quantum information processors. For …
On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature
G Ghibaudo, M Aouad, M Cassé, S Martinie… - Solid-State …, 2020 - Elsevier
A comprehensive analysis of the MOSFET subthreshold swing for a 2D subband with
exponential band tail of states is first proposed. Then, a compact analytical expression for …
exponential band tail of states is first proposed. Then, a compact analytical expression for …
Performance and low-frequency noise of 22-nm FDSOI down to 4.2 K for cryogenic applications
BC Paz, M Cassé, C Theodorou… - … on Electron Devices, 2020 - ieeexplore.ieee.org
This work presents the performance and low-frequency noise (LFN) of 22-nm fully-depleted
silicon-on-insulator (FDSOI) CMOS technology. The experimental measurements and the …
silicon-on-insulator (FDSOI) CMOS technology. The experimental measurements and the …
Energy-efficient computing at cryogenic temperatures
Increasing demand for data-intense computing applications—such as artificial intelligence,
large language models and high-performance computing—has created a need for …
large language models and high-performance computing—has created a need for …
[HTML][HTML] Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures
This paper presents an in-depth DC characterization of a 22 nm FDSOI CMOS technology
down to deep cryogenic temperature, ie, 2.95 K. The impact of the back-gate voltage (V …
down to deep cryogenic temperature, ie, 2.95 K. The impact of the back-gate voltage (V …
CMOS integrated circuits for the quantum information sciences
Over the past decade, significant progress in quantum technologies has been made, and
hence, engineering of these systems has become an important research area. Many …
hence, engineering of these systems has become an important research area. Many …