Electric fields drive the degradation of wide-bandgap semiconductor devices. However,
directly mapping the electric field inside an active device region remains challenging. Here …

Al x Ga 1− x N/GaN high-electron-mobility transistor (HEMT) structures are key components
in electronic devices operating at gigahertz or higher frequencies. In order to optimize such …

Group-III nitrides have transformed solid-state lighting and are strategically positioned to
revolutionize high-power and high-frequency electronics. To drive this development forward …

Yellow luminescence (YL) is probably the longest and most studied defect-related
luminescence band in GaN, yet its electronic structure or chemical identity remain unclear …

Gallium nitride (GaN) has emerged as one of the most attractive materials for radio
frequency (RF) and power conversion technologies that require high-power and high …

We present a method to obtain quantitative profiles of surface state charge density and
monitor its dynamics under various stress conditions in high electron mobility transistor …

In this work, we demonstrate multi-channel GaN varactors with enhanced quality-factor (Q-
factor) and cutoff frequency (f 0) and present a comprehensive investigation of their current …

The polarization discontinuity across interfaces in polar nitride-based heterostructures can
lead to the formation of two-dimensional electron and hole gases. In the past, the …

When a high-electron mobility transistor is illuminated, the absorbed photons excite electron-
hole pairs. The generated pairs are separated by the built-in field in such a way that the …

Group-III nitrides have transformed solid-state lighting and are strategically positioned to
revolutionize high-power and high-frequency electronics. To drive this development forward …