Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …

Silicon (Si) and/or germanium (Ge) nanomembranes (NMs) play crucial roles in various
applications, including conventional microelectronics, as well as recently emerging high …

The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers
manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap …

A silicon-compatible light source is the final missing piece for completing high-speed, low-
power on-chip optical interconnects. In this paper, we present a germanium nanowire light …

In recent years much effort has been made to increase the Sn content in GeSn alloys in
order to increase direct bandgap charge carrier recombination and, therefore, to reach room …

Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon
nitride stressor layers. Photoluminescence measurements demonstrate emission at …

The full exploration of Si-based photonic integrated circuits is limited by the lack of an
efficient light source that is compatible with the complementary metal–oxide–semiconductor …

Enhanced direct-gap light emission is reported for Si-capped n^+-Ge layers on Si after post-
growth rapid cyclic annealing (RCA), and impact of non-radiative recombination (NRR) at …