Cubic silicon carbide (3C‐SiC) has superior mobility and thermal conduction over that of
widely applied hexagonal 4H‐SiC. Moreover, much lower concentration of interfacial traps …

Hetero-epitaxy of 3C–SiC on Si-face and C-face 4H–SiC is experimentally investigated and
corresponding growth model is identified. This study of polytypes of SiC will be useful for …

We present a comparative study of the C-face and Si-face of 3C-SiC (111) grown on off-
oriented 4H-SiC substrates by the sublimation epitaxy. By the lateral enlargement method …

We report on the structural and electronic properties of graphene grown on SiC by high-
temperature sublimation. We have studied thickness uniformity of graphene grown on 4H …

High quality double-position-boundaries free 3C-SiC epilayers have been successfully
grown on on-axis (0001) 4H-SiC by chemical vapor deposition at optimized conditions as …

Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of
epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is …

The theoretically high mobility of graphene on C-terminated face of silicon carbide (SiC (000-
1)) makes it a suitable candidate for electronic devices. However, the quality of graphene …

Microscopic real-time observation of the solution growth interface of SiC using Fe–Si solvent
at 1673 K was successfully performed to understand the interface morphology at the initial …

Silicon carbide is one of the most promising materials for power electronic devices capable
of operating at extreme conditions. The widespread application of silicon carbide power …

A SiC crystal mixed with 4H-, 6H-, and 15R-SiC polytypes and their wetting properties were
characterized using precisely dispensed de-ionized (DI) water drops. Contact angles of a DI …