Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons
The excitation of surface-phonon-polariton (SPhP) modes in polar dielectric crystals and the
associated new developments in the field of SPhPs are reviewed. The emphasis of this work …
associated new developments in the field of SPhPs are reviewed. The emphasis of this work …
Dislocations in 4H silicon carbide
Owing to the superior properties of the wide bandgap, high carrier mobility, high thermal
conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for …
conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for …
Impurities and defects in 4H silicon carbide
R Wang, Y Huang, D Yang, X Pi - Applied Physics Letters, 2023 - pubs.aip.org
The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …
Mechanisms of growth and defect properties of epitaxial SiC
In the last ten years, large improvements in the epitaxial silicon carbide processes have
been made. The introduction of chloride precursors, the epitaxial growth on large area …
been made. The introduction of chloride precursors, the epitaxial growth on large area …
Atomic structure, stability, and dissociation of dislocations in cadmium telluride
Dislocation plays a crucial role in many material properties of semiconductors, ranging from
plastic deformation to electronic transport. But the dislocation structures and reactions …
plastic deformation to electronic transport. But the dislocation structures and reactions …
Stabilization of point-defect spin qubits by quantum wells
Defect-based quantum systems in wide bandgap semiconductors are strong candidates for
scalable quantum-information technologies. However, these systems are often complicated …
scalable quantum-information technologies. However, these systems are often complicated …
Growth of Shockley type stacking faults upon forward degradation in 4H-SiC pin diodes
A Tanaka, H Matsuhata, N Kawabata, D Mori… - Journal of Applied …, 2016 - pubs.aip.org
The growth of Shockley type stacking faults in pin diodes fabricated on the C-face of 4H-SiC
during forward current operation was investigated using Berg-Barrett X-ray topography and …
during forward current operation was investigated using Berg-Barrett X-ray topography and …
Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation
Abstract 4H-SiC has been commercialized as a material for power semiconductor devices.
However, the long-term reliability of 4H-SiC devices is a barrier to their widespread …
However, the long-term reliability of 4H-SiC devices is a barrier to their widespread …
On the driving force for recombination-induced stacking fault motion in 4H–SiC
JD Caldwell, RE Stahlbush, MG Ancona… - Journal of Applied …, 2010 - pubs.aip.org
The formation and expansion of recombination-induced stacking faults (SFs) within 4H–SiC
bipolar and unipolar devices is known to induce a drift in the forward voltage during forward …
bipolar and unipolar devices is known to induce a drift in the forward voltage during forward …