[PDF][PDF] Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon
SP Kobeleva, IM Anfimov, VS Berdnikov… - Modern Electronic …, 2019 - moem.pensoft.net
Electrical resistivity distribution maps have been constructed for single crystal silicon wafers
cut out of different parts of Czochralski grown ingots. The general inhomogeneity of the …
cut out of different parts of Czochralski grown ingots. The general inhomogeneity of the …
TCAD simulation of electrical characteristics of silicon tunnel junctions for monolithically integrated silicon/perovskite tandem solar cells
Silicon tunnel junctions are a possible option for interconnecting the silicon and the
perovskite sub-cells into a monolithic tandem solar cell. Thus, their electrical characteristics …
perovskite sub-cells into a monolithic tandem solar cell. Thus, their electrical characteristics …
Identification and neutralization of lifetime-limiting defects in Czochralski silicon for high efficiency photovoltaic applications
E Letty - 2017 - theses.hal.science
Photovoltaic solar cells based on crystalline silicon represent more than 90% of the
worldwide photovoltaic market. High efficiency solar cell architectures are currently being …
worldwide photovoltaic market. High efficiency solar cell architectures are currently being …
Identification of lifetime-limiting defects in as-received and heat treated seed-end Czochralski wafers
Major impurity-induced defects in Czochralski silicon are known to be related to oxygen and
metallic elements. In this study we focus on seed-end wafers, and submit them to different …
metallic elements. In this study we focus on seed-end wafers, and submit them to different …
Root-cause analysis and characterization of oxygen-related defects in silicon PV material: an approach from macro to nanoscale
A Youssef - 2018 - dspace.mit.edu
With energy demand forecasted to grow significantly, efforts towards mitigating global
warming effects by reducing greenhouse gas emissions are becoming stricter as more …
warming effects by reducing greenhouse gas emissions are becoming stricter as more …
N-type Czochralski silicon ingots-Oxygen-related defects in the last solid fraction
B Haave - 2016 - ntnuopen.ntnu.no
The focus of this master's thesis has been the formation of oxygen-related defects in the last
10 cm before the tail in Czochralski silicon ingots for solar cell applications. For nine …
10 cm before the tail in Czochralski silicon ingots for solar cell applications. For nine …