Making clean electrical contacts on 2D transition metal dichalcogenides

Y Wang, M Chhowalla - Nature Reviews Physics, 2022 - nature.com
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …

Two-dimensional transition metal dichalcogenides: interface and defect engineering

Z Hu, Z Wu, C Han, J He, Z Ni, W Chen - Chemical Society Reviews, 2018 - pubs.rsc.org
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as
promising candidates for next generation nanoelectronics. Because of their atomically-thin …

Approaching the quantum limit in two-dimensional semiconductor contacts

W Li, X Gong, Z Yu, L Ma, W Sun, S Gao, Ç Köroğlu… - Nature, 2023 - nature.com
The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …

Electrical characterization of 2D materials-based field-effect transistors

SB Mitta, MS Choi, A Nipane, F Ali, C Kim… - 2D …, 2020 - iopscience.iop.org
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

Bright and Efficient Light‐Emitting Devices Based on 2D Transition Metal Dichalcogenides

T Ahmed, J Zha, KKH Lin, HC Kuo, C Tan… - Advanced …, 2023 - Wiley Online Library
Abstract 2D monolayer transition metal dichalcogenides (TMDCs) show great promise for
the development of next‐generation light‐emitting devices owing to their unique electronic …

Universal scaling laws in Schottky heterostructures based on two-dimensional materials

YS Ang, HY Yang, LK Ang - Physical review letters, 2018 - APS
We identify a new universality in the carrier transport of two-dimensional (2D) material-
based Schottky heterostructures. We show that the reversed saturation current (J) scales …

Origins of genuine Ohmic van der Waals contact between indium and MoS2

BK Kim, TH Kim, DH Choi, H Kim, K Watanabe… - npj 2D Materials and …, 2021 - nature.com
The achievement of ultraclean Ohmic van der Waals (vdW) contacts at metal/transition-metal
dichalcogenide (TMDC) interfaces would represent a critical step for the development of …

Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides

JRD Retamal, D Periyanagounder, JJ Ke, ML Tsai… - Chemical …, 2018 - pubs.rsc.org
Ever since two dimensional-transition (2D) metal dichalcogenides (TMDs) were discovered,
their fascinating electronic properties have attracted a great deal of attention for harnessing …

Half‐Valley Ohmic Contact: Contact‐Limited Valley‐Contrasting Current Injection

X Feng, CS Lau, SJ Liang, CH Lee… - Advanced Functional …, 2024 - Wiley Online Library
The 2D ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an
exciting material platform for probing Berry phase physics. How FVSC can be incorporated …

Synthesis of high‐performance monolayer molybdenum disulfide at low temperature

JH Park, AY Lu, PC Shen, BG Shin, H Wang… - Small …, 2021 - Wiley Online Library
The large‐area synthesis of high‐quality MoS2 plays an important role in realizing industrial
applications of optoelectronics, nanoelectronics, and flexible devices. However, current …