Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …

The world needs economical and sustainable alternate energy sources to combat the
irreversible phenomenon like global warming. Solar photovoltaic technology, which converts …

A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the
“green gap” has been a subject of intense scientific and engineering interest. While several …

We report on the demonstration of a new type of axial nanowire LED heterostructures, with
the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large …

High-quality nitride materials grown on scalable and low-cost metallic substrates are
considerably attractive for high-power light-emitters. We demonstrate here, for the first time …

“Efficiency droop,” ie, a decline in brightness of light-emitting diodes (LEDs) at high electrical
currents, limits the performance of all commercial LEDs and has limited the output power of …

In this paper, we have performed a detailed investigation of the temperature-and current-
dependent emission characteristics of nanowire light-emitting diodes, wherein InGaN/GaN …

Widegap III-nitride alloys have enabled new classes of optoelectronic devices including light
emitting diodes, lasers and solar cells, but it is admittedly challenging to extend their …

We demonstrate the strong influence of strain on the morphology and In content of InGaN
insertions in GaN nanowires, in agreement with theoretical predictions which establish that …

The structural properties and the strain state of InGaN/GaN superlattices embedded in GaN
nanowires were analyzed as a function of superlattice growth temperature, using …