Recent advances in light sources on silicon

Y Han, H Park, J Bowers, KM Lau - Advances in Optics and Photonics, 2022 - opg.optica.org
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

2023 astrophotonics roadmap: pathways to realizing multi-functional integrated astrophotonic instruments

N Jovanovic, P Gatkine, N Anugu… - Journal of Physics …, 2023 - iopscience.iop.org
Photonic technologies offer numerous functionalities that can be used to realize
astrophotonic instruments. The most spectacular example to date is the ESO Gravity …

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

A Remis, L Monge-Bartolome, M Paparella… - Light: Science & …, 2023 - nature.com
Silicon (Si) photonics has recently emerged as a key enabling technology in many
application fields thanks to the mature Si process technology, the large silicon wafer size …

High-speed and low dark current silicon-waveguide-coupled III-V photodetectors selectively grown on SOI

Y Xue, Y Han, Y Wang, J Li, J Wang, Z Zhang, X Cai… - Optica, 2022 - opg.optica.org
Seamlessly integrating III-V active devices with Si passive components in a monolithic
manner is the key for fully integrated Si photonics. In this article, we demonstrate high …

Recent Progress in III–V Photodetectors Grown on Silicon

C Zeng, D Fu, Y Jin, Y Han - Photonics, 2023 - mdpi.com
An efficient photodetector (PD) is a key component in silicon-based photonic integrated
circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation …

Integrated O-and C-band silicon-lithium niobate Mach-Zehnder modulators with 100 GHz bandwidth, low voltage, and low loss

F Valdez, V Mere, X Wang, S Mookherjea - Optics Express, 2023 - opg.optica.org
Broadband integrated thin-film lithium niobate (TFLN) electro-optic modulators (EOM) are
desirable for optical communications and signal processing in both the O-band (1310 nm) …

[HTML][HTML] Present and future of terahertz integrated photonic devices

S Rajabali, IC Benea-Chelmus - Apl Photonics, 2023 - pubs.aip.org
Photonic integrated circuits have benefited many fields in the natural sciences. Their
nanoscale patterning has led to the discovery of novel sources and detectors from ultraviolet …

Cumulative effect of spectral downshifting, anti-reflection and space-charge region formation in enhancing the spectral response of self-powered silicon …

KSR Bapathi, MF Abdelbar, W Jevasuwan, PH Borse… - Nano Energy, 2024 - Elsevier
Abstract Despite their ubiquity, Silicon (Si)-based photodetectors face intrinsic limitations
that inhibit their performance, especially in the critical ultraviolet (UV) range. Downshifting of …

103 GHz germanium-on-silicon photodiode enabled by an optimized U-shaped electrode

Y Shi, X Li, M Zou, Y Yu, X Zhang - Photonics Research, 2023 - opg.optica.org
High-performance germanium photodiodes are crucial components in silicon photonic
integrated circuits for large-capacity data communication. However, the bandwidths of most …

Monolithically integrated UVC AlGaN-based multiple quantum wells structure and photonic chips for solar-blind communications

R He, N Liu, Y Gao, R Chen, S Zhang, H Yuan, Y Duo… - Nano Energy, 2022 - Elsevier
High quality AlGaN material growth and chip fabrication of monolithically integrated solar
blind light-emitting diodes (LEDs), waveguides and photodetectors (PDs) on an AlGaN multi …