Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices
The unique physical, chemical, and electronic properties of rare earth oxides have been of
immense interest to replace SiO 2 as a dielectric material in metal–oxide–semiconductor …
immense interest to replace SiO 2 as a dielectric material in metal–oxide–semiconductor …
Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
Trilayer memory capacitors of control HfO 2/floating gate of Ge nanoparticles in HfO 2/tunnel
HfO 2/Si substrate deposited by magnetron sputtering and subsequently annealed are …
HfO 2/Si substrate deposited by magnetron sputtering and subsequently annealed are …
Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors
Abstract Effects of gamma-ray irradiation on the electrical characteristics of Al 2 O 3 MOS
capacitors such as barrier height, acceptor concentration, series resistance and interface …
capacitors such as barrier height, acceptor concentration, series resistance and interface …
Structure and electrical transport in films of Ge nanoparticles embedded in SiO2 matrix
The films containing Ge nanoparticles embedded in SiO 2 matrix were prepared by RF
magnetron sputtering and subsequently by thermal annealing. Their structure was …
magnetron sputtering and subsequently by thermal annealing. Their structure was …
Use of BiFeO3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate
The possible usage of BiFeO 3 (bismuth ferrite) in MOS (metal-oxide-semiconductor) based
radiation sensors was studied. Gamma radiation effects on the electrical characteristics of …
radiation sensors was studied. Gamma radiation effects on the electrical characteristics of …
Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature
SiO x layers with x= 1.15 and 1.3 and thicknesses of 50 and 100 nm were deposited on
crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were …
crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were …
Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry
This article makes a brief review of the most important results obtained by the authors and
their collaborators during the last four years in the field of the development of metal-insulator …
their collaborators during the last four years in the field of the development of metal-insulator …
Silicon oxide films containing amorphous or crystalline silicon nanodots for device applications
Тhe impressive recent growth of the portable systems market (mobile PC, MP3 audio player,
digital camera, mobile phones, hybrid hard disks, etc.), has increased the interest of the …
digital camera, mobile phones, hybrid hard disks, etc.), has increased the interest of the …
Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program
A Kahraman, E Yılmaz - Sakarya University Journal of Science, 2017 - dergipark.org.tr
The aim of the present study is to determine the pre-irradiation threshold voltages of the
RadFET dosimeters with gate oxide composed of high-k dielectrics and compare the results …
RadFET dosimeters with gate oxide composed of high-k dielectrics and compare the results …
The effect of oxide layer thickness on the quantification of 1.5 MeV γ–radiation induced interface traps in the Ag/SiO2/Si MOS devices
This work presents the effect of varied thickness of oxide layer and radiation dose on
electrical characteristics of Ag/SiO 2/Si MOS devices irradiated by 1.5 MeV γ–radiations of …
electrical characteristics of Ag/SiO 2/Si MOS devices irradiated by 1.5 MeV γ–radiations of …