Enhanced photovoltaic properties in graphene/polycrystalline BiFeO3/Pt heterojunction structure
Y Zang, D Xie, X Wu, Y Chen, Y Lin, M Li… - Applied Physics …, 2011 - pubs.aip.org
We report the enhanced photovoltaic properties in polycrystalline BiFeO 3 (BFO) thin films
with graphene as top electrodes. The short circuit current density (J sc) and open circuit …
with graphene as top electrodes. The short circuit current density (J sc) and open circuit …
Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications
We introduce a novel lead-free ferroelectric thin film (1-x) BaTiO3-xBa (Cu1/3Nb2/3) O3 (x=
0.025)(BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) …
0.025)(BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) …
Effects of Y doping on multiferroic properties of sol–gel deposited BiFeO3 thin films
D Kuang, P Tang, X Ding, S Yang, Y Zhang - Journal of Materials Science …, 2015 - Springer
Abstract Polycrystalline BiFeO 3 (BFO), Bi 0.99 Y 0.01 FeO 3 (BYF1), Bi 0.97 Y 0.03 FeO 3
(BYF3), Bi 0.95 Y 0.05 FeO 3 (BYF5) and Bi 0.90 Y 0.10 FeO 3 (BYF10) thin films have been …
(BYF3), Bi 0.95 Y 0.05 FeO 3 (BYF5) and Bi 0.90 Y 0.10 FeO 3 (BYF10) thin films have been …
Prominent ferroelectric properties in multilayered TiO2 Mn-doped BiFeO3 spin-coated thin films
The study investigates the effects of doping on the leakage current and ferroelectric
properties of bismuth ferrite (BiFeO3) thin film-based heterostructures. The spin coating …
properties of bismuth ferrite (BiFeO3) thin film-based heterostructures. The spin coating …
Effect of electrical stress on Au/Pb (Zr0. 52Ti0. 48) O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors
Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure with 20 nm thin lead zirconate
titanate (PZT) ferroelectric film and 6 nm ultrathin high-κ titanium oxynitride (TiO x N y) …
titanate (PZT) ferroelectric film and 6 nm ultrathin high-κ titanium oxynitride (TiO x N y) …
Enhanced memory characteristics by interface modification of ferroelectric LiNbO3 films on Si using ZnO buffers
L Hao, Y Li, J Zhu, Z Wu, J Wang, X Liu… - Journal of alloys and …, 2014 - Elsevier
Interface modification of ferroelectric LiNbO 3 (LN) films on silicon (Si) is performed by the
incorporation of a ZnO buffer layer. The microstructures and memory characteristics of the …
incorporation of a ZnO buffer layer. The microstructures and memory characteristics of the …
Effects of Pr and Ni Co-Substitution on the Structural and Ferroelectric Properties of BiFeO3 Thin Films Prepared by a Sol-Gel Method
D Kuang, P Tang, S Yang, Y Zhang - Ferroelectrics, 2015 - Taylor & Francis
BiFeO3 (BFO) and Bi0. 9Pr0. 1Fe1-xNixO3 (0.01≤ x≤ 0.1) thin films have been fabricated
on Pt (111)/Ti/SiO2/Si substrates by a sol-gel method. The Pr and Ni co-substitution effects …
on Pt (111)/Ti/SiO2/Si substrates by a sol-gel method. The Pr and Ni co-substitution effects …
Light-Induced Modulation in Resistance Switching of Carbon Nanotube/ BiFeO3/Pt Heterostructure
Y Chen, Y Zang, D Xie, X Wu, T Ren, J Wei… - Integrated …, 2012 - Taylor & Francis
We report a light-induced modulation effect in resistance switching of proposed carbon
nanotube (CNT)/BiFeO3/Pt heterostructure. XRD, Raman, SEM, and AFM measurements …
nanotube (CNT)/BiFeO3/Pt heterostructure. XRD, Raman, SEM, and AFM measurements …
Fabrication and Characterization of Metal–Ferroelectric–Insulator–Semiconductor Capacitor Structure with Ferroelectric (Bi, Pr)(Fe, Mn) O3 Thin Films
T Kawae, Y Seto, A Morimoto - Japanese Journal of Applied …, 2013 - iopscience.iop.org
Abstract (Bi, Pr)(Fe, Mn) O 3 (BPFM) thin films were deposited on SiO 2/Si substrates by a
chemical solution deposition method, resulting in the metal–ferroelectric–insulator …
chemical solution deposition method, resulting in the metal–ferroelectric–insulator …
Characterization of Au/PbTi0. 5Fe0. 5O3/Si structure for possible multiferroic based non-volatile memory applications
Magnetoelectric multiferroic PbTi 0.5 Fe 0.5 O 3 films are deposited on a⟨ 100⟩ conducting
p-Si substrate without any buffer layer by using pulsed laser deposition and characterized …
p-Si substrate without any buffer layer by using pulsed laser deposition and characterized …