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US10446700B2 - Microstructure enhanced absorption photosensitive devices - Google
Patents US10446700B2 - Microstructure enhanced absorption photosensitive devices …

H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …

US9496435B2 - Microstructure enhanced absorption photosensitive devices - Google Patents
US9496435B2 - Microstructure enhanced absorption photosensitive devices - Google Patents …

(57) ABSTRACT A photonic structure can include in one aspect one or more waveguides
formed by patterning of waveguiding material adapted to propagate light energy. Such …

US9813152B2 - Method and system for optoelectronics transceivers integrated on a CMOS chip
- Google Patents US9813152B2 - Method and system for optoelectronics transceivers integrated …

H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …

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- Google Patents US9748429B1 - Avalanche diode having reduced dark current and method …

There is set forth herein a method including building an interposer base structure on a first
wafer having a first substrate, wherein the building an interposer base structure includes …

Embodiments of the present invention describe a waveguide based photodetector device
and its methods of fabrication. The waveguide photodetector device comprises a substrate …