Ferroelectric wurtzites have the potential to revolutionize modern microelectronics because
they are easily integrated with multiple mainstream semiconductor platforms. However, the …

Electrically switchable bistable conductance that occurs in ferroelectric materials has
attracted growing interest due to its promising applications in data storage and in‐memory …

Ferroelectric materials have been explored for a long time for easy integration with state-of-
the-art semiconductor technologies. Doped wurtzite nitrides have been reported as …

The recent demonstration of ferroelectricity in nitride materials has enabled a broad
spectrum of applications across electronics, optoelectronics, photovoltaics, photonics …

Ferroelectric, phase-change, and magnetic materials are considered promising candidates
for advanced memory devices. Under the development dilemma of traditional silicon-based …

The ferroelectric phase of hafnia (ferroelectric HfO 2) has been considered as a promising
ferroelectric material for nanoscale electronic devices due to its robust ferroelectricity that is …

We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently
developed epitaxial nitride metal electrode, Nb 2 N. While a control AlN thin film exhibits …

ScAlN has garnered substantial attention for its robust piezoelectric and ferroelectric
properties, holding promise for diverse electronic device applications. However, the …

The impact of strain on the formation energy and migration behavior of nitrogen vacancies
(VNs) in Al1–x Sc x N has been investigated by first-principles calculations. The formation …

Integrating ferroelectric AlScN with III–N semiconductors to enhance the performance and
tunability of nitride devices requires high-quality AlScN films. This work focuses on the effect …