A tutorial on high-density power module packaging
Transportation electrification in many forms along with continued grid modernization efforts
is placing stringent requirements on volumetric and gravimetric power densities for power …
is placing stringent requirements on volumetric and gravimetric power densities for power …
EMI challenges in modern power electronic-based converters: recent advances and mitigation techniques
L Yuan, J Zhang, Z Liang, M Hu, G Chen… - Frontiers in Electronics, 2023 - frontiersin.org
The utilization of power electronic-based converters is gaining momentum across a wide
spectrum of industries. However, modern power electronic converters operate at higher …
spectrum of industries. However, modern power electronic converters operate at higher …
Integrated common-mode filter for GaN power module with improved high-frequency EMI performance
While the employment of wide bandgap (WBG) devices in high-frequency and high-voltage
applications brings benefits such as reduced system size and improved efficiency, it …
applications brings benefits such as reduced system size and improved efficiency, it …
Improved packaging of power module with low-permittivity material for low common-mode noise and high reliability
S Choi, J Choi, T Warnakulasooriya… - … on Power Electronics, 2024 - ieeexplore.ieee.org
This article proposes a novel power module configuration which replaces a part of the
bottom copper layer of a direct-bonded copper by low-permittivity (low-ϵ) epoxy. The …
bottom copper layer of a direct-bonded copper by low-permittivity (low-ϵ) epoxy. The …
PCB-on-DBC GaN power module design with high-density integration and double-sided cooling
Lateral gallium nitride (GaN) high-electron-mobility transistors present better electrical
characteristics compared to silicon or silicon carbide devices such as high switching speed …
characteristics compared to silicon or silicon carbide devices such as high switching speed …
Power module with low common-mode noise and high reliability
Silicon carbide devices provide higher switching speed and switching frequency than their
silicon counterpart. However, these characteristics generate significant electromagnetic …
silicon counterpart. However, these characteristics generate significant electromagnetic …
An embedded GaN power module with double-sided cooling and high-density integration
In this paper, an embedded GaN half-bridge power module with double-sided cooling, low
inductance, low thermal resistance, on-package decoupling capacitors, localized common …
inductance, low thermal resistance, on-package decoupling capacitors, localized common …
Fabrication and Experimental Validation of Low Inductance SiC Power Module with Integrated Microchannel Cooler
With∽ 3x larger energy bandgap compared to silicon (Si), silicon carbide (SiC) power
devices offer lower specific conduction resistances and faster switching speed, enabling a …
devices offer lower specific conduction resistances and faster switching speed, enabling a …
Mitigating EMI Noise in Propagation Paths: Review of Parasitic and Coupling Effects in Power Electronic Packages, Filters, and Systems
The wide applications of wide-bandgap (WBG) devices in power electronics systems bring
benefits in higher switching speed, frequency, and power density, but also cause severe …
benefits in higher switching speed, frequency, and power density, but also cause severe …
EMI filter integration for GaN power module using air-cured magnetic composite
Severe electromagnetic interference (EMI) issues in wide-bandgap (WBG) power electronics
systems result in larger filter sizes to attenuate noise, which compromises the high power …
systems result in larger filter sizes to attenuate noise, which compromises the high power …