Using rapid thermal annealing, we fabricated a series of InAs/GaAs quantum dot samples
with ground-state emission ranging from 1.05 eV to 1.35 eV. This set of annealed samples …

In quantum-dot laser devices containing a quasi-two-dimensional wetting layer, a pump
process initially populates the wetting-layer states. The scattering of carriers from these …

We report photon correlation measurements that reveal unique signatures of biexciton and
charged exciton emissions in a single self-assembled InAs quantum dot. Biexciton emission …

We investigate experimentally and theoretically the resonant emission of single InAs/GaAs
quantum dots in a planar microcavity. Due to the presence of at least one residual charge in …

We show that the use of modified droplet epitaxy allows to tune the wetting layer thickness in
GaAs quantum dot structures. Morphological observations demonstrate that the wetting layer …

We report in this review on the electronic continuum states of semiconductor Quantum Wells
and Quantum Dots and highlight the decisive part played by the virtual bound states in the …

We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs
quantum dot structures—grown by modified droplet epitaxy—where no wetting layer is …

Fluorescence intermittency in InP self-assembled dots is investigated by means of far field
imaging and single dot spectroscopy. Based on our observation that blinking dots are found …

A rate-equation model, in which three discrete quantum-dot (QD) energy levels are assumed
and all possible relaxation paths and carrier transport in the GaAs barrier are considered, is …

Quantum-dot QD lasers with record low-threshold currents have now been realized in
several laboratories1–3 with self-assembled QDs. Carriers in such lasers are electrically …