Implementation of triple-value memory cell based carbon nanotube field-effect transistor
M Eslami - AEU-International Journal of Electronics and …, 2020 - Elsevier
In this paper, a novel method has been proposed to implement a Carbon Nanotube Field-
Effect Transistor (CNTFET) based with 8T SRAM cells 32 at nm technology and triple-value …
Effect Transistor (CNTFET) based with 8T SRAM cells 32 at nm technology and triple-value …
Design and performance prediction of ternary SRAM cells using GAA CNTFETs for low power applications
B Muley, S Saha - 2023 3rd Asian Conference on Innovation in …, 2023 - ieeexplore.ieee.org
The given work introduces a novel design of a low power 17 transistor ternary static random
access memory (17T-TSRAM) cell that utilizes a 10nm gate all around carbon nanotube field …
access memory (17T-TSRAM) cell that utilizes a 10nm gate all around carbon nanotube field …
Improved Read/Write Stability-Based Level Shift 5T Ternary SRAM Cell Design Using Enhanced Gate Diffusion Input BWGCNTFET
G Suneel Kumar, G Mamatha - Journal of Circuits, Systems and …, 2023 - World Scientific
Nowadays, CNTFET introduced the complexity of SRAM design along with the stability. To
overcome these complexities, an enhanced Gate Diffusion Input technique-based Ballistic …
overcome these complexities, an enhanced Gate Diffusion Input technique-based Ballistic …
Challenges and solutions of working under threshold supply‐voltage, for CNTFET‐based SRAM‐bitcell
S Shahrabadi - IET Circuits, Devices & Systems, 2022 - Wiley Online Library
Recently, several studies were done on SRAM bitcells at different supply‐voltages; upper,
near or lower to threshold voltage. To the best of the author's knowledge, none of them …
near or lower to threshold voltage. To the best of the author's knowledge, none of them …
Comparative Evaluation of 6T, 8T and 10T Ternary SRAM Cells Schemes for Future VLSI and Power Electronics
AS Bale, KA Patil, DSN Reddy… - … Conference on Smart …, 2024 - ieeexplore.ieee.org
A ternary SRAM cell can be built as a restorage element by joining ternary inverters back-to-
back. In this work, it is shown that the evaluation of ternary logic using the 8 T SRAM cell is …
back. In this work, it is shown that the evaluation of ternary logic using the 8 T SRAM cell is …
MVL Random Access Memory
Abstract Random-Access-Memory (RAM), which is an integral part of modern computing
system, provides high-speed access to and temporary storage of data and programs during …
system, provides high-speed access to and temporary storage of data and programs during …