Nanowire electronics: from nanoscale to macroscale

C Jia, Z Lin, Y Huang, X Duan - Chemical reviews, 2019 - ACS Publications
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Cryogenic transport characteristics of P-type gate-all-around silicon nanowire MOSFETs

J Gu, Q Zhang, Z Wu, J Yao, Z Zhang, X Zhu, G Wang… - Nanomaterials, 2021 - mdpi.com
A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide
semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk …

Single‐Gate In‐Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric Switching

CH Chen, YT Lai, CF Chen, PT Wu, KJ Su… - Advanced …, 2023 - Wiley Online Library
In nanostructure assemblies, the superposition of current paths forms microscopic electric
circuits, and different circuit networks produce varying results, particularly when utilized as …

Length dependent thermal conductivity of silicon and copper nanowire: a molecular dynamics study

NA Akil - Molecular Crystals and Liquid Crystals, 2024 - Taylor & Francis
The miniaturization and higher power density of modern electronics pose a significant
challenge in thermal management. A key focus in addressing this challenge revolves …

Unusual fluid of one-dimensional disordered bosons at finite temperature

AR Sakhel, WJ Mullin, RR Sakhel - Physical Review A, 2023 - APS
In previous important examinations by Aleiner et al.[Nat. Phys. 6, 900 (2010) 1745-2473
10.1038/nphys1758] and Michal et al.[Proc. Natl. Acad. Sci.(USA) 113, E4455 (2016) 0027 …