Abstract Domain walls (DWs) in magnetic nanowires are promising candidates for a variety
of applications including Boolean/unconventional logic, memories, in-memory computing as …

Ferrimagnetic Mn 4 N is a promising candidate for current-induced domain wall motion
assisted by spin-transfer and spin–orbit torques. Mn 4 N can be doped to have …

The use of epitaxial layers for domain wall-based spintronic applications is often hampered
by the presence of pinning sites. Here, we show that when depositing Mn 4 N (10 nm) …

Ferrimagnets are of interest in spintronics owing to the enhancement of spin transfer and
spin–orbit torque in the vicinity of the magnetic compensation point. Here, we study the …

Architectures based on multi-bit magnetic domain walls (DWs) take advantage of the fast
speed, high density, nonvolatility, and flexible design of DWs to process and store data bits …

Artificial Intelligence (AI) has been gaining traction recently. However, they are executed on
devices with the von Neumann architecture, requiring high power input. Consequently, brain …

Ferrimagnetic TbFe or TbFeCo amorphous alloy thin films have been grown by
coevaporation in ultrahigh vacuum. They exhibit an out-of-plane magnetic anisotropy up to …

To achieve a 20 Gbps data rate using the upcoming 5G communication standard, it is crucial
to recognize a domain wall (DW) velocity (vDW) of 1200 ms− 1. We demonstrate a potential …

We demonstrate the ability to create, control the propagation, and annihilate domain walls in
25-nm thick Tb 22 Co 78 ferrimagnetic alloy wires using a temperature gradient under a …

We investigated current-induced DW motion in asymmetric interfacial multilayered Tb/Co
wires for various thicknesses of magnetic and Pt-capping layers. It is found that the driving …