Sub-10 nm two-dimensional transistors: Theory and experiment

R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang… - Physics Reports, 2021 - Elsevier
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Van der Waals heterostructures and devices

Y Liu, NO Weiss, X Duan, HC Cheng, Y Huang… - Nature Reviews …, 2016 - nature.com
Two-dimensional layered materials (2DLMs) have been a central focus of materials
research since the discovery of graphene just over a decade ago. Each layer in 2DLMs …

Interaction-and defect-free van der Waals contacts between metals and two-dimensional semiconductors

G Kwon, YH Choi, H Lee, HS Kim, J Jeong, K Jeong… - Nature …, 2022 - nature.com
High Schottky barrier heights at metal–semiconductor junctions due to Fermi-level pinning
can degrade the performance of electronic devices and increase their energy consumption …

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Q Wang, L Cao, SJ Liang, W Wu, G Wang… - npj 2D Materials and …, 2021 - nature.com
Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …

Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives

M Samadi, N Sarikhani, M Zirak, H Zhang… - Nanoscale …, 2018 - pubs.rsc.org
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2,
WS2 and WSe2, constitute an important class of materials with a layered crystal structure …

Gate-controlled reversible rectifying behavior investigated in a two-dimensional diode

Q Liu, JJ Li, D Wu, XQ Deng, ZH Zhang, ZQ Fan… - Physical Review B, 2021 - APS
By using density functional theory and ab initio quantum-transport simulation, we study the
Schottky barrier and the rectifying behavior of diodes consisting of the two-dimensional …

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Y Wang, S Liu, Q Li, R Quhe, C Yang… - Reports on Progress …, 2021 - iopscience.iop.org
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …

Transferred via contacts as a platform for ideal two-dimensional transistors

Y Jung, MS Choi, A Nipane, A Borah, B Kim… - Nature …, 2019 - nature.com
Two-dimensional semiconductors have a number of valuable properties that could be used
to create novel electronic devices. However, creating 2D devices with good contacts and …

Low-resistance metal contacts to encapsulated semiconductor monolayers with long transfer length

Y Liu, S Liu, Z Wang, B Li, K Watanabe, T Taniguchi… - Nature …, 2022 - nature.com
Two-dimensional semiconductors such as transition metal dichalcogenides are of potential
use in electronic and optoelectronic devices due to their high mobility, direct optical …

High-performance sub-10 nm monolayer Bi 2 O 2 Se transistors

R Quhe, J Liu, J Wu, J Yang, Y Wang, Q Li, T Li, Y Guo… - Nanoscale, 2019 - pubs.rsc.org
A successful two-dimensional (2D) semiconductor successor of silicon for high-performance
logic in the post-silicon era should have both excellent performance and air stability …