Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently
gaining momentum in semiconductor processing, because of the increasing need for …

Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

The atomic layer deposition (ALD) technique allows the synthesis of materials at the atomic
scale to be controlled. ALD has been adapted to design and prepare single-atom catalysts …

This review provides an overview of area-selective thin film deposition (ASD) with a primary
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …

Area-selective atomic layer deposition (AS-ALD) is a promising “bottom-up” alternative to
current nanopatterning techniques. Self-assembled monolayers (SAM) have been …

Area-selective atomic layer deposition (ALD) is rapidly gaining interest because of its
potential application in self-aligned fabrication schemes for next-generation …

Short-chain aminosilanes, namely, bis (N, N-dimethylamino) dimethylsilane (DMADMS) and
(N, N-dimethylamino) trimethylsilane (DMATMS), have been used as Si precursors for …

The chemical approaches enabling selective atomic layer deposition (ALD) are gaining
growing interest. The selective ALD has unlocked attractive avenues for the development of …

Area‐selective atomic layer deposition (AS‐ALD) offers tremendous advantages in
comparison with conventional top‐down patterning processes that atomic‐level selective …

Area selective atomic layer deposition has the potential to significantly improve current
fabrication approaches by introducing a bottom-up process in which robust and conformal …